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Results:
1-7
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Results: 7
Authors:
SEITZ H
AHLBORN K
SEIBT M
SCHROTER W
Citation: H. Seitz et al., SENSITIVITY LIMITS OF STRAIN MAPPING PROCEDURES USING HIGH-RESOLUTIONELECTRON-MICROSCOPY, Journal of Microscopy, 190, 1998, pp. 184-189
Authors:
SEITZ H
AHLBORN K
SEIBT M
SCHROTER W
Citation: H. Seitz et al., QUANTITATIVE DECOMPOSITION ANALYSIS BY DI RECT INTERPRETATION OF HIGH-RESOLUTION ELECTRON-MICROGRAPHS, European journal of cell biology, 74, 1997, pp. 76-76
Authors:
SIETHOFF H
AHLBORN K
Citation: H. Siethoff et K. Ahlborn, DEBYE-TEMPERATURE-ELASTIC-CONSTANTS RELATIONSHIP FOR MATERIALS WITH HEXAGONAL AND TETRAGONAL SYMMETRY, Journal of applied physics, 79(6), 1996, pp. 2968-2974
Authors:
SIETHOFF H
AHLBORN K
Citation: H. Siethoff et K. Ahlborn, THE DEPENDENCE OF THE DEBYE TEMPERATURE ON THE ELASTIC-CONSTANTS, Physica status solidi. b, Basic research, 190(1), 1995, pp. 179-191
Authors:
SEITZ H
SEIBT M
BAUMANN FH
AHLBORN K
SCHROTER W
Citation: H. Seitz et al., QUANTITATIVE STRAIN MAPPING USING HIGH-RESOLUTION ELECTRON-MICROSCOPY, Physica status solidi. a, Applied research, 150(2), 1995, pp. 625-634
Authors:
AHLBORN K
BRION HG
SIETHOFF H
Citation: K. Ahlborn et al., DYNAMICAL RECOVERY OF INSB(123) BETWEEN 340-DEGREES-C AND 510-DEGREES-C, Philosophical magazine letters, 70(2), 1994, pp. 87-92
Authors:
SIETHOFF H
AHLBORN K
Citation: H. Siethoff et K. Ahlborn, A NEW REGIME OF DYNAMIC RECOVERY IN THE HIGH-TEMPERATURE DEFORMATION OF SEMICONDUCTORS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(4), 1994, pp. 793-804
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