Authors: AJIOKA T SHIBATA M MIZOKAMI Y

Citation: T. Ajioka et al., ISSUES OF WET CLEANING IN ULSI PROCESS, IEICE transactions on electronics, E79C(3), 1996, pp. 337-342

Authors: MIZOKAMI Y AJIOKA T TERADA N

Citation: Y. Mizokami et al., CHEMICAL-ANALYSIS OF METALLIC CONTAMINATION ON A WAFER AFTER WET CLEANING, IEEE transactions on semiconductor manufacturing, 7(4), 1994, pp. 447-453

Authors: TANAKA H UCHIDA H AJIOKA T HIRASHITA N

Citation: H. Tanaka et al., THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2231-2236

Authors: AJIOKA T NARA A TOMINAGA Y USHIKOSHI T KITABAYASHI H

Citation: T. Ajioka et al., A METHOD OF ELIMINATING B-MODE DIELECTRIC-BREAKDOWN FAILURE IN GATE OXIDES UTILIZING A CHARGING PHENOMENON, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2282-2286

Authors: UCHIDA H HIRASHITA N AJIOKA T

Citation: H. Uchida et al., THE EFFECT OF OXIDE CHARGES AT LOCOS ISOLATION EDGES ON OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 40(10), 1993, pp. 1818-1822