Authors: YUNUSOV MS KARIMOV M ALIKULOV M AKHMADALIEV A OKSENGENDLER BL SABIROV SS

Citation: Ms. Yunusov et al., FEATURES OF RADIATION-INDUCED DEFECT FORMATION IN P-TYPE SI(B,PT), Semiconductors, 31(6), 1997, pp. 618-619

Authors: YUNUSOV MS AKHMADALIEV A SABIROV SS

Citation: Ms. Yunusov et al., FORMATION AND ANNEALING OUT OF RADIATION DEFECTS IN P-SI(P,PT), Semiconductors, 29(4), 1995, pp. 346-347

Authors: YUNUSOV MS AKHMADALIEV A OKSENGENDLER BL BEGMATOV KA

Citation: Ms. Yunusov et al., SOME ASPECTS OF THE ELECTRON SPECTRUM OF D-SHELL DOPANTS IN SILICON, Semiconductors, 29(4), 1995, pp. 371-372

Authors: YUNUSOV MS AKHMADALIEV A BEGMATOV KA

Citation: Ms. Yunusov et al., SEMICONDUCTOR DETECTOR AS IONIZING-RADIATION DOSIMETER, Radiation physics and chemistry, 46(4-6), 1995, pp. 1287-1290

Authors: YUNUSOV MS OKSENGENDLER BL AKHMADALIEV A DZHUMANOV S

Citation: Ms. Yunusov et al., CONCEPTION OF SELF-COMPENSATION IN THE D- ADMIXTURES PROBLEM IN SEMICONDUCTORS, Fizika tverdogo tela, 37(3), 1995, pp. 593-597

Authors: YUNUSOV MS AKHMADALIEV A OKSENGENDLER BL BEGMATOV KA

Citation: Ms. Yunusov et al., ON SEVERAL REGULARITIES OF DEEP LEVELS OF D-IMPURITIES IN SILICON, Physica status solidi. a, Applied research, 149(2), 1995, pp. 29-31