Authors: ALEKSANDROV OV ZAKHARIN AO SOBOLEV NA SHEK EI MAKOVIICHUK MI PARSHIN EO

Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS UPON ANNEALING OF DYSPROSIUM-IMPLANTED ANDHOLMIUM-IMPLANTED SILICON, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 921-923

Authors: ALEKSANDROV OV AFONIN NN

Citation: Ov. Aleksandrov et Nn. Afonin, NONEQUILIBRIUM SEGREGATION OF PHOSPHORUS IN THE SYSTEM SILICON DIOXIDE SILICON, Semiconductors, 32(1), 1998, pp. 15-18

Authors: ALEKSANDROV OV AFONIN NN

Citation: Ov. Aleksandrov et Nn. Afonin, MODEL FOR THE BUILDUP OF PHOSPHORUS AT SILICON SURFACES, Semiconductors, 30(9), 1996, pp. 823-826

Authors: ALEKSANDROV OV SOBOLEV NA SHEK EI MERKULOV AV

Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS DURING ANNEALING OF ERBIUM-IMPLANTED SILICON, Semiconductors, 30(5), 1996, pp. 468-471

Authors: ALEKSANDROV OV EMTSEV VV POLOSKIN DS SOBOLEV NA SHEK EI

Citation: Ov. Aleksandrov et al., SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON, Semiconductors, 28(11), 1994, pp. 1126-1127

Authors: ALEKSANDROV OV AFONIN NN ARSHINOV OM

Citation: Ov. Aleksandrov et al., CHARACTERISTICS OF BORON REDISTRIBUTION I N NEAR-THE-SURFACE SILICON AREA DUE TO DIFFUSION FROM BOROSILICATE GLASS, Zurnal tehniceskoj fiziki, 64(6), 1994, pp. 101-105