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Results: 26-32/32
Authors:
CHATILLON C
HARMAND JC
ALEXANDRE F
Citation: C. Chatillon et al., THERMODYNAMIC ANALYSIS OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY AT THE SURFACE-STRUCTURE TRANSITION FROM 3X1 TO 4X2, Journal of crystal growth, 130(3-4), 1993, pp. 451-458
Authors:
ALEXANDRE F
ZERGUINE D
LAUNAY P
BENCHIMOL JL
ETRILLARD J
Citation: F. Alexandre et al., CBE SELECTIVE EMBEDDED GROWTH FOR QUASI-PLANAR GAAS HBT APPLICATION, Journal of crystal growth, 127(1-4), 1993, pp. 221-225
Authors:
BENCHIMOL JL
ALEXANDRE F
JOURDAN N
POUGNET AM
MELLET R
SERMAGE B
HELIOT F
DUBONCHEVALLIER C
Citation: Jl. Benchimol et al., CARBON DOPING OF GAAS FOR HETEROJUNCTION BIPOLAR-TRANSISTORS - A COMPARISON BETWEEN MBE AND CBE, Journal of crystal growth, 127(1-4), 1993, pp. 690-694
Authors:
SEIDEL W
LUGAGNEDELPON E
VOISIN P
RAO EVK
KRAUZ P
ALEXANDRE F
Citation: W. Seidel et al., OPTICAL PROBING OF INTERMIXING IN GAAS-ALGAAS MULTIQUANTUM WELLS, Journal of applied physics, 74(4), 1993, pp. 2968-2970
Authors:
ZERGUINE D
LAUNAY P
ALEXANDRE F
BENCHIMOL JL
ETRILLARD J
Citation: D. Zerguine et al., HIGH-FREQUENCY QUASIPLANAR GAINP GAAS HBT WITH CBE SELECTIVE COLLECTOR CONTACT REGROWTH/, Electronics Letters, 29(15), 1993, pp. 1349-1350
Authors:
DANGLA J
BENCHIMOL JL
ALEXANDRE F
SIK H
DUBONCHEVALLIER C
Citation: J. Dangla et al., STABILITY OF HIGHLY BE-DOPED GAAS GAINP HBTS GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(10), 1993, pp. 903-905
Authors:
ROCHICCIOLI P
ROGE B
ALEXANDRE F
TAUBER MT
Citation: P. Rochiccioli et al., SCHOOL-ACHIEVEMENT IN CHILDREN WITH HYPOTHYROIDISM DETECTED AT BIRTH AND SEARCH FOR PREDICTIVE FACTORS, Hormone research, 38(5-6), 1992, pp. 236-240