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Results: 1-7 |
Results: 7
INDEPENDENT IMPLANT PARAMETER EFFECTS ON SIMOX SOI DISLOCATION FORMATION
Authors: DATTA R ALLEN LP DOLAN RP JONES KS FARLEY M
Citation: R. Datta et al., INDEPENDENT IMPLANT PARAMETER EFFECTS ON SIMOX SOI DISLOCATION FORMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 8-13
THIN BOX SIMOX SILICON-ON-INSULATOR SUBSTRATES FOR RADIATION TOLERANTADVANCED ELECTRONICS
Authors: ALLEN LP ALLES ML DOLAN RP HUGHES HL MCMARR P
Citation: Lp. Allen et al., THIN BOX SIMOX SILICON-ON-INSULATOR SUBSTRATES FOR RADIATION TOLERANTADVANCED ELECTRONICS, Microelectronic engineering, 36(1-4), 1997, pp. 383-386
CORRELATION OF IMPLANTATION DEFECTS WITH INTERFACE RECOMBINATION VELOCITIES AND CARRIER LIFETIMES IN ANNEALED SIMOX SOI MATERIALS BY USING A CONTACTLESS OPTICAL MODULATION TECHNIQUE
Authors: CHANG YS LI SS DATTA R ALLEN LP
Citation: Ys. Chang et al., CORRELATION OF IMPLANTATION DEFECTS WITH INTERFACE RECOMBINATION VELOCITIES AND CARRIER LIFETIMES IN ANNEALED SIMOX SOI MATERIALS BY USING A CONTACTLESS OPTICAL MODULATION TECHNIQUE, Solid-state electronics, 41(8), 1997, pp. 1189-1198
REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES
Authors: LIU ST ALLEN LP ANC MJ JENKINS WC HUGHES HL TWIGG ME LAWRENCE RK
Citation: St. Liu et al., REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2101-2105
SIMOX RESEARCH, DEVELOPMENT, AND MANUFACTURING
Authors: ALLEN LP SMICK TH RYDING G
Citation: Lp. Allen et al., SIMOX RESEARCH, DEVELOPMENT, AND MANUFACTURING, Journal of electronic materials, 25(1), 1996, pp. 93-97
IN-SITU RUTHERFORD BACKSCATTERING DESIGN FOR EARLY SIMOX-SOI METALLICSCREENING
Authors: ALLEN LP FARLEY M PURSER KH RYDING G SMICK TH
Citation: Lp. Allen et al., IN-SITU RUTHERFORD BACKSCATTERING DESIGN FOR EARLY SIMOX-SOI METALLICSCREENING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 782-786
OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL
Authors: CROWDER SW GRIFFIN PB HSIEH CJ WEI GY PLUMMER JD ALLEN LP
Citation: Sw. Crowder et al., OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 64(24), 1994, pp. 3264-3266
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