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Results: 1-25/30
Authors:
WARREN WL
PIKE GE
DIMOS D
TUTTLE BA
ALSHAREEF HN
Citation: Wl. Warren et al., CHARGE TRAPPING IN RESISTANCE DEGRADED FERROELECTRICS, Integrated ferroelectrics, 18(1-4), 1997, pp. 49-61
Authors:
BOYLE TJ
ALSHAREEF HN
BUCHHEIT CD
CYGAN RT
DIMOS D
RODRIGUEZ MA
SCOTT B
ZILLER JW
Citation: Tj. Boyle et al., NONTRADITIONAL SOLUTION ROUTES TO FERROELECTRIC MATERIALS, Integrated ferroelectrics, 18(1-4), 1997, pp. 213-223
Authors:
RAYMOND MV
ALSHAREEF HN
DIMOS DB
MISSERT N
MUELLER CH
GALT D
Citation: Mv. Raymond et al., SPUTTER-DEPOSITION OF SRTIO3 THIN-FILMS FOR VOLTAGE TUNABLE CAPACITORS, Integrated ferroelectrics, 17(1-4), 1997, pp. 247-256
Authors:
WARREN WL
DIMOS D
TUTTLE BA
PIKE GE
ALSHAREEF HN
Citation: Wl. Warren et al., RELATIONSHIPS AMONG FERROELECTRIC FATIGUE, ELECTRONIC CHARGE TRAPPING, DEFECT-DIPOLES, AND OXYGEN VACANCIES IN PEROVSKITE OXIDES, Integrated ferroelectrics, 16(1-4), 1997, pp. 77-86
Authors:
ALSHAREEF HN
DIMOS D
WARREN WL
TUTTLE BA
Citation: Hn. Alshareef et al., A MODEL FOR OPTICAL AND ELECTRICAL-POLARIZATION FATIGUE IN SRBI2TA2O9AND PB(ZR,TI)O-3, Integrated ferroelectrics, 15(1-4), 1997, pp. 53-67
Authors:
BOYLE TJ
ALAM TM
DIMOS D
MOORE GJ
BUCHHEIT CD
ALSHAREEF HN
MECHENBIER ER
BEAR BR
ZILLER JW
Citation: Tj. Boyle et al., NIOBIUM(V) ALKOXIDES - SYNTHESIS, STRUCTURE, AND CHARACTERIZATION OF [NB(MU-OCH2CH3)(OCH2C(CH3)(3))(4)](2), 2O)(CH2-MU-O)(C(O)(2))]NB-2(MU-O)(OCH2CH3)(5))(2), AND ([H3CC(CH2O)(2)(CH2-MU-O)]NB(OCH2CH3)(2))(2) FOR PRODUCTION OF MIXED-METAL OXIDE THIN-FILMS, Chemistry of materials, 9(12), 1997, pp. 3187-3198
Authors:
ALSHAREEF HN
DIMOS D
TUTTLE BA
RAYMOND MV
Citation: Hn. Alshareef et al., METALLIZATION SCHEMES FOR DIELECTRIC THIN-FILM CAPACITORS, Journal of materials research, 12(2), 1997, pp. 347-354
Authors:
BOYLE TJ
ALSHAREEF HN
Citation: Tj. Boyle et Hn. Alshareef, A NEW AND RAPID PROCESS FOR PRODUCTION OF SOLUTION-DERIVED (PB,LA)(ZR,TI)O-3 THIN-FILMS AND POWDERS, Journal of Materials Science, 32(9), 1997, pp. 2263-2266
Authors:
ALSHAREEF HN
DIMOS D
Citation: Hn. Alshareef et D. Dimos, LEAKAGE AND RELIABILITY CHARACTERISTICS OF LEAD-ZIRCONATE-TITANATE THIN-FILM CAPACITORS, Journal of the American Ceramic Society, 80(12), 1997, pp. 3127-3132
Authors:
WARREN WL
TUTTLE BA
DIMOS D
PIKE GE
ALSHAREEF HN
RAMESH R
EVANS JT
Citation: Wl. Warren et al., IMPRINT IN FERROELECTRIC CAPACITORS, JPN J A P 1, 35(2B), 1996, pp. 1521-1524
Authors:
BOYLE TJ
BUCHHEIT CD
RODRIGUEZ MA
ALSHAREEF HN
HERNANDEZ BA
SCOTT B
ZILLER JW
Citation: Tj. Boyle et al., FORMATION OF SRBI2TA2O9 .1. SYNTHESIS AND CHARACTERIZATION OF A NOVELSOL-GEL SOLUTION FOR PRODUCTION OF FERROELECTRIC SRBI2TA2O9 THIN-FILMS, Journal of materials research, 11(9), 1996, pp. 2274-2281
Authors:
TUTTLE BA
HEADLEY TJ
ALSHAREEF HN
VOIGT JA
RODRIGUEZ M
MICHAEL J
WARREN WL
Citation: Ba. Tuttle et al., MICROSTRUCTURE AND 90-DEGREES DOMAIN ASSEMBLAGES OF PB(ZR,TI)O-3 /RUO2 CAPACITORS AS A FUNCTION OF ZR-TO-TI STOICHIOMETRY/, Journal of materials research, 11(9), 1996, pp. 2309-2317
Authors:
ALSHAREEF HN
CHEN X
LICHTENWALNER DJ
KINGON AI
Citation: Hn. Alshareef et al., ANALYSIS OF THE OXIDATION-KINETICS AND BARRIER LAYER PROPERTIES OF ZRN AND PT RU THIN-FILMS FOR DRAM APPLICATIONS/, Thin solid films, 280(1-2), 1996, pp. 265-270
Authors:
ALSHAREEF HN
DIMOS D
WARREN WL
TUTTLE BA
Citation: Hn. Alshareef et al., VOLTAGE OFFSETS AND IMPRINT MECHANISM IN SRBI2TA2O9 THIN-FILMS, Journal of applied physics, 80(8), 1996, pp. 4573-4577
Authors:
DIMOS D
ALSHAREEF HN
WARREN WL
TUTTLE BA
Citation: D. Dimos et al., PHOTOINDUCED CHANGES IN THE FATIGUE BEHAVIOR OF SRBI2TA2O9 AND PB(ZR,TI)O-3 THIN-FILMS, Journal of applied physics, 80(3), 1996, pp. 1682-1687
EFFECT OF B-SITE CATION STOICHIOMETRY ON ELECTRICAL FATIGUE OF RUO2 PB(ZRXTI1-X)O-3/RUO2 CAPACITORS/
Authors:
ALSHAREEF HN
TUTTLE BA
WARREN WL
HEADLEY TJ
DIMOS D
VOIGT JA
NASBY RD
Citation: Hn. Alshareef et al., EFFECT OF B-SITE CATION STOICHIOMETRY ON ELECTRICAL FATIGUE OF RUO2 PB(ZRXTI1-X)O-3/RUO2 CAPACITORS/, Journal of applied physics, 79(2), 1996, pp. 1013-1016
Authors:
ALSHAREEF HN
DIMOS D
BOYLE TJ
WARREN WL
TUTTLE BA
Citation: Hn. Alshareef et al., QUALITATIVE MODEL FOR THE FATIGUE-FREE BEHAVIOR OF SRBI2TA2O9, Applied physics letters, 68(5), 1996, pp. 690-692
Authors:
ALSHAREEF HN
TUTTLE BA
WARREN WL
DIMOS D
RAYMOND MV
RODRIGUEZ MA
Citation: Hn. Alshareef et al., LOW-TEMPERATURE PROCESSING OF NB-DOPED PB(ZR,TI)O-3 CAPACITORS WITH LA0.5SR0.5COO3 ELECTRODES, Applied physics letters, 68(2), 1996, pp. 272-274
Authors:
WARREN WL
ALSHAREEF HN
DIMOS D
TUTTLE BA
PIKE GE
Citation: Wl. Warren et al., DRIVING-FORCE BEHIND VOLTAGE SHIFTS IN FERROELECTRIC MATERIALS, Applied physics letters, 68(12), 1996, pp. 1681-1683
Authors:
WARREN WL
DIMOS D
ALSHAREEF HN
RAYMOND MV
TUTTLE BA
PIKE GE
Citation: Wl. Warren et al., LINKS BETWEEN ELECTRICAL AND OPTICAL FATIGUE IN PB(ZR,TI)O-3 THIN-FILMS, Journal of the American Ceramic Society, 79(6), 1996, pp. 1714-1716
Authors:
ALSHAREEF HN
BELLUR KR
AUCIELLO O
KINGON AI
Citation: Hn. Alshareef et al., ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS WITH MODIFIED RUO2 BOTTOM ELECTRODES, Integrated ferroelectrics, 8(1-2), 1995, pp. 151-163
Authors:
CHEN X
KINGON AI
ALSHAREEF HN
BELLUR KR
GIFFORD K
AUCIELLO O
Citation: X. Chen et al., LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS, Integrated ferroelectrics, 7(1-4), 1995, pp. 291-306
Authors:
AUCIELLO O
GIFFORD KD
LICHTENWALNER DJ
DAT R
ALSHAREEF HN
BELLUR KR
KINGON AI
Citation: O. Auciello et al., A REVIEW OF COMPOSITION-STRUCTURE-PROPERTY RELATIONSHIPS FOR PZT-BASED HETEROSTRUCTURE CAPACITORS, Integrated ferroelectrics, 6(1-4), 1995, pp. 173-187
Authors:
FOSTER CM
CSENCSITS R
BAI GR
LI Z
WILLS LA
HISKES R
ALSHAREEF HN
DIMOS D
Citation: Cm. Foster et al., STRUCTURE AND PROPERTIES OF HETEROEPITAXIAL PB(ZR0.35TI0.65)O-3 SRRUO3 MULTILAYER THIN-FILMS ON SRTIO3(100) PREPARED BY MOCVD AND RF-SPUTTERING/, Integrated ferroelectrics, 10(1-4), 1995, pp. 31-38
Authors:
TUTTLE BA
ALSHAREEF HN
WARREN WL
RAYMOND MV
HEADLEY TJ
VOIGT JA
EVANS J
RAMESH R
Citation: Ba. Tuttle et al., LA0.5SR0.5COO3 ELECTRODE TECHNOLOGY FOR PB(ZR,TI)O-3 THIN-FILM NONVOLATILE MEMORIES, Microelectronic engineering, 29(1-4), 1995, pp. 223-230