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Results: 1-16 |
Results: 16
FABRICATION OF SILICON AND METAL NANOWIRES AND DOTS USING MECHANICAL ATOMIC-FORCE LITHOGRAPHY
Authors: HU S HAMIDI A ALTMEYER S KOSTER T SPANGENBERG B KURZ H
Citation: S. Hu et al., FABRICATION OF SILICON AND METAL NANOWIRES AND DOTS USING MECHANICAL ATOMIC-FORCE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2822-2824
NOVEL-APPROACH TO ATOMIC-FORCE LITHOGRAPHY
Authors: HU S ALTMEYER S HAMIDI A SPANGENBERG B KURZ H
Citation: S. Hu et al., NOVEL-APPROACH TO ATOMIC-FORCE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1983-1986
ON THE INFLUENCE OF RARE-EARTH DOPING ON MICROSTRUCTURE AND PHASE-COMPOSITION OF SPUTTERED, EPITAXIAL BI2SR2(CAX-1REX)CU2O8+DELTA FILMS ANDMULTILAYERS
Authors: MELTZOW AC ALTMEYER S KURZ H ZAKHAROV ND SENZ S HESSE D
Citation: Ac. Meltzow et al., ON THE INFLUENCE OF RARE-EARTH DOPING ON MICROSTRUCTURE AND PHASE-COMPOSITION OF SPUTTERED, EPITAXIAL BI2SR2(CAX-1REX)CU2O8+DELTA FILMS ANDMULTILAYERS, Physica. C, Superconductivity, 302(2-3), 1998, pp. 207-214
MOS-COMPATIBLE FABRICATION AND CHARACTERIZATION OF TUNNEL-JUNCTIONS IN BESOI-MATERIAL
Authors: KOSTER T HADAM B GOLDSCHMIDTBOING F HOFMANN K GONDERMANN J STEIN J HU S ALTMEYER S SPANGENBERG B KURZ H
Citation: T. Koster et al., MOS-COMPATIBLE FABRICATION AND CHARACTERIZATION OF TUNNEL-JUNCTIONS IN BESOI-MATERIAL, Microelectronic engineering, 42, 1998, pp. 531-534
AFTERSHOCKS IN COHERENT-NOISE MODELS
Authors: WILKE C ALTMEYER S MARTINETZ T
Citation: C. Wilke et al., AFTERSHOCKS IN COHERENT-NOISE MODELS, Physica. D, 120(3-4), 1998, pp. 401-417
POTENTIAL AND CHALLENGES OF SINGLE-ELECTRON DEVICES
Authors: ALTMEYER S HOFMANN K HAMIDI A HU S SPANGENBERG B KURZ H
Citation: S. Altmeyer et al., POTENTIAL AND CHALLENGES OF SINGLE-ELECTRON DEVICES, Vacuum, 51(2), 1998, pp. 295-299
METAL-OXIDE-SEMICONDUCTOR-COMPATIBLE SILICON-BASED SINGLE-ELECTRON TRANSISTOR USING BONDED AND ETCHED BACK SILICON-ON-INSULATOR MATERIAL
Authors: KOSTER T HADAM B HOFMANN K GONDERMANN J STEIN J HU S ALTMEYER S SPANGENBERG B KURZ H
Citation: T. Koster et al., METAL-OXIDE-SEMICONDUCTOR-COMPATIBLE SILICON-BASED SINGLE-ELECTRON TRANSISTOR USING BONDED AND ETCHED BACK SILICON-ON-INSULATOR MATERIAL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2836-2839
SUSTAINED NONTUMORIGENIC PHENOTYPE CORRELATES WITH A LARGELY STABLE CHROMOSOME CONTENT DURING LONG-TERM CULTURE OF THE HUMAN KERATINOCYTE LINE HACAT
Authors: BOUKAMP P POPP S ALTMEYER S HULSEN A FASCHING C CREMER T FUSENIG NE
Citation: P. Boukamp et al., SUSTAINED NONTUMORIGENIC PHENOTYPE CORRELATES WITH A LARGELY STABLE CHROMOSOME CONTENT DURING LONG-TERM CULTURE OF THE HUMAN KERATINOCYTE LINE HACAT, Genes, chromosomes & cancer, 19(4), 1997, pp. 201-214
77 K SINGLE-ELECTRON TRANSISTORS FABRICATED WITH 0.1-MU-M TECHNOLOGY
Authors: ALTMEYER S HAMIDI A SPANGENBERG B KURZ H
Citation: S. Altmeyer et al., 77 K SINGLE-ELECTRON TRANSISTORS FABRICATED WITH 0.1-MU-M TECHNOLOGY, Journal of applied physics, 81(12), 1997, pp. 8118-8120
METAL-BASED SINGLE-ELECTRON TRANSISTORS OPERATING AT SEVERAL KELVIN
Authors: ALTMEYER S HAMIDI A SPANGENBERG B KURZ H
Citation: S. Altmeyer et al., METAL-BASED SINGLE-ELECTRON TRANSISTORS OPERATING AT SEVERAL KELVIN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4034-4037
CARCINOGENIC EFFECTS OF EXPOSURE OF RATS TO LOW-DOSES OF FISSION NEUTRONS DELIVERED AT LOW-DOSE RATE
Authors: MORIN M ALLIN F ALTMEYER S
Citation: M. Morin et al., CARCINOGENIC EFFECTS OF EXPOSURE OF RATS TO LOW-DOSES OF FISSION NEUTRONS DELIVERED AT LOW-DOSE RATE, Comptes rendus de l'Academie des sciences. Serie 3, Sciences de la vie, 319(7), 1996, pp. 633-636
A POSSIBLE ROAD TO 77 K SINGLE-ELECTRON DEVICES
Authors: ALTMEYER S KUHNEL F SPANGENBERG B KURZ H
Citation: S. Altmeyer et al., A POSSIBLE ROAD TO 77 K SINGLE-ELECTRON DEVICES, Semiconductor science and technology, 11(11), 1996, pp. 1502-1505
STEP-EDGE CUT-OFF - A NEW FABRICATION PROCESS FOR METAL-BASED SINGLE-ELECTRON DEVICES
Authors: ALTMEYER S SPANGENBERG B KUHNEL F KURZ H
Citation: S. Altmeyer et al., STEP-EDGE CUT-OFF - A NEW FABRICATION PROCESS FOR METAL-BASED SINGLE-ELECTRON DEVICES, Microelectronic engineering, 30(1-4), 1996, pp. 399-402
LIFE-THREATENING SALICYLATE POISONING FOL LOWING PERCUTANEOUS-ABSORPTION IN A PATIENT WITH ICHTHYOSIS VULGARIS
Authors: GERMANN R SCHINDERA I KUCH M SEITZ U ALTMEYER S SCHINDERA F
Citation: R. Germann et al., LIFE-THREATENING SALICYLATE POISONING FOL LOWING PERCUTANEOUS-ABSORPTION IN A PATIENT WITH ICHTHYOSIS VULGARIS, Hautarzt, 47(8), 1996, pp. 624-627
A NEW CONCEPT FOR THE DESIGN AND REALIZATION OF METAL-BASED SINGLE-ELECTRON DEVICES - STEP-EDGE CUTOFF
Authors: ALTMEYER S SPANGENBERG B KURZ H
Citation: S. Altmeyer et al., A NEW CONCEPT FOR THE DESIGN AND REALIZATION OF METAL-BASED SINGLE-ELECTRON DEVICES - STEP-EDGE CUTOFF, Applied physics letters, 67(4), 1995, pp. 569-571
IRRADIATION AND BRAIN-TUMORS IN RATS
Authors: MORIN M ALLIN F ALTMEYER S MASSE R
Citation: M. Morin et al., IRRADIATION AND BRAIN-TUMORS IN RATS, Comptes rendus de l'Academie des sciences. Serie 3, Sciences de la vie, 317(3), 1994, pp. 277-281
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