Authors: ALTUKHOV PD KUZMINOV EG IVANOV GV

Citation: Pd. Altukhov et al., EXCITONS AND MULTI-EXCITON COMPLEXES BOUND TO A 2-DIMENSIONAL HOLE LAYER AT A SILICON SURFACE - THE KONDO EFFECT, THE COULOMB-BLOCKADE AND A NEGATIVE PHOTOCONDUCTIVITY, Superlattices and microstructures, 23(5), 1998, pp. 985-990

Authors: ALTUKHOV PD IVANOV GV KUZMINOV EG

Citation: Pd. Altukhov et al., A SELFORGANIZED DOUBLE POTENTIAL BARRIER IN TUNNELING LIGHT-EMITTING SILICON MOS STRUCTURES, Solid-state electronics, 42(9), 1998, pp. 1657-1660

Authors: ALTUKHOV PD BULGAKOV AG IVANOV GV KUZMINOV EG

Citation: Pd. Altukhov et al., BISTABLE ELECTROLUMINESCENCE OF TUNNELING SILICON MOS STRUCTURES, Solid state communications, 103(2), 1997, pp. 103-106

Authors: ALTUKHOV PD

Citation: Pd. Altukhov, EXCITONS IN A DENSE 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR SURFACE, Surface science, 362(1-3), 1996, pp. 428-430

Authors: ALTUKHOV PD BAKUN AA KOVALENKO YA

Citation: Pd. Altukhov et al., EMISSIVE RECOMBINATION OF 2-DIMENSIONAL HOLES AND NONEQUILIBRIUM ELECTRONS ON [111] SILICON SURFACE, Pis'ma v Zurnal tehniceskoj fiziki, 19(4), 1993, pp. 42-46

Authors: ALTUKHOV PD BAKUN AA KOVALENKO YA

Citation: Pd. Altukhov et al., LOCALIZED EXCITONS AND EXCITON MOLECULES ON [III]SILICON SURFACE IN MDS-STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 19(24), 1993, pp. 46-49