Authors: MOREIRA HS SAMPAIO JF ALVES ES DEOLIVEIRA AG

Citation: Hs. Moreira et al., ELECTRON-CONCENTRATION DEPENDENCE OF THE COULOMB GAP IN ALGAAS-SI, Physical review letters, 80(8), 1998, pp. 1706-1709

Authors: SAMPAIO JF FREIRE SLS ALVES ES

Citation: Jf. Sampaio et al., THE EFFECT OF THE SURFACE FERMI-LEVEL PINNING ON THE PROPERTIES OF DELTA-DOPED SYSTEMS, Journal of applied physics, 81(1), 1997, pp. 530-532

Authors: NEVES BRA SAMPAIO JF ALVES ES MOREIRA MVB DEOLIVEIRA AG

Citation: Bra. Neves et al., EVIDENCE FOR THE COEXISTENCE OF 2-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON GASES IN THE EMITTER OF DOUBLE-BARRIER DEVICES, Superlattices and microstructures, 20(2), 1996, pp. 181-186

Authors: NEVES BRA ALVES ES SAMPAIO JF DEOLIVEIRA AG MOREIRA MVB

Citation: Bra. Neves et al., SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES, Applied physics letters, 69(8), 1996, pp. 1125-1127

Authors: ALVES ES

Citation: Es. Alves, THE EFFECTS OF THE POLLUTION ON WOOD OF CECROPIA-GLAZIOUI (CECROPIACEAE), IAWA journal, 16(1), 1995, pp. 69-80

Authors: CARVALHO ATG DEOLIVEIRA AG ALVES ES MOREIRA MVB

Citation: Atg. Carvalho et al., MIGRATION OF SILICON ATOMS IN PLANAR-DOPED GAAS ALGAAS MODULATION-DOPED FLUID EFFECT TRANSISTOR HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 149-155