Authors: KIM K AN MH SHIN YG SUH MS YOUN CJ LEE YH LEE KB LEE HJ

Citation: K. Kim et al., OXIDE-GROWTH ON SILICON (100) IN THE PLASMA PHASE OF DRY OXYGEN USINGAN ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2667-2673

Authors: AN MH SUH MS KIM KJ YOUN CJ NAHM KS LEE KB

Citation: Mh. An et al., CHARACTERISTICS OF N-BOND STRUCTURES IN SILICON-OXIDE FILMS DEPOSITEDBY ECR PLASMA CVD WITH A SIH4 N2O GAS-MIXTURE WHEN ADDING N-2/, Journal of the Korean Physical Society, 29(3), 1996, pp. 384-391

Authors: KIM KJ LEE YH AN MH SUH MS YOUN CJ LEE KB LEE HJ

Citation: Kj. Kim et al., GROWTH LAW OF SILICON-OXIDES BY DRY OXIDATION, Semiconductor science and technology, 11(7), 1996, pp. 1059-1064

Authors: KIM K SUH MS KIM TS YOUN CJ SUH EK SHIN YJ LEE KB LEE HJ AN MH LEE HJ RYU H

Citation: K. Kim et al., ROOM-TEMPERATURE VISIBLE PHOTOLUMINESCENCE FROM SILICON-RICH OXIDE LAYERS DEPOSITED BY AN ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE, Applied physics letters, 69(25), 1996, pp. 3908-3910

Authors: SEO YH NAHM KS AN MH SUH EK LEE YH LEE KB LEE HJ

Citation: Yh. Seo et al., FORMATION MECHANISM AND PORE SIZE CONTROL OF LIGHT-EMITTING POROUS SILICON, JPN J A P 1, 33(12A), 1994, pp. 6425-6431

Authors: ZHAN SG LIU JS ZENG XC DENG Y AN MH

Citation: Sg. Zhan et al., STUDIES ON ADIABATIC THERMOKINETICS .4. T HERMOKINETIC RESEARCH OF REVERSIBLE-REACTIONS, Huaxue xuebao, 51(10), 1993, pp. 937-942