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Results: 1-25/52
Authors:
POPOV VG
DUBROVSKII YV
KHANIN YN
VDOVIN EE
MAUDE DK
PORTAL JC
ANDERSSON TG
THORDSON J
Citation: Vg. Popov et al., ELECTRON-TUNNELING BETWEEN 2-DIMENSIONAL ELECTRONIC SYSTEMS IN A HETEROSTRUCTURE WITH A SINGLE DOPED BARRIER, Semiconductors, 32(5), 1998, pp. 539-543
Authors:
HOLTZ PO
SERNELIUS B
FERREIRA AC
POZINA G
MONEMAR B
MAURITZ O
EKENBERG U
THORDSON J
ANDERSSON TG
Citation: Po. Holtz et al., DOPANT DELTA-LAYERS IN GAAS AND GAAS ALGAAS QUANTUM STRUCTURES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 213-221
Authors:
BOSKER G
STOLWIJK NA
THORDSON JV
SODERVALL U
ANDERSSON TG
Citation: G. Bosker et al., DIFFUSION OF NITROGEN FROM A BURIED DOPING LAYER IN GALLIUM-ARSENIDE REVEALING THE PROMINENT ROLE OF AS INTERSTITIALS, Physical review letters, 81(16), 1998, pp. 3443-3446
Authors:
POZINA G
IVANOV I
MONEMAR B
THORDSON JV
ANDERSSON TG
Citation: G. Pozina et al., PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN GANAS FROM OPTICAL SPECTROSCOPY, Journal of applied physics, 84(7), 1998, pp. 3830-3835
Authors:
KHANIN YN
VDOVIN EE
DUBROVSKII YV
NOVOSELOV KS
ANDERSSON TG
Citation: Yn. Khanin et al., TUNNELING RESONANCES IN STRUCTURES WITH A 2-STEP BARRIER, JETP letters, 67(10), 1998, pp. 863-868
Authors:
ROSLUND JH
SWENSON G
ANDERSSON TG
Citation: Jh. Roslund et al., UNDOPED GA1-XINXSB GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, JPN J A P 2, 36(2B), 1997, pp. 220-222
Authors:
POZINA G
IVANOV I
MONEMAR B
THORDSON J
ANDERSSON TG
Citation: G. Pozina et al., OPTICAL CHARACTERIZATION OF MBE-GROWN GANAS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 153-156
Authors:
BUYANOV AV
HOLTZ PO
POZINA G
MONEMAR B
THORDSON J
ANDERSSON TG
Citation: Av. Buyanov et al., TRANSPORT-PROPERTIES OF SILICON DELTA-DOPED GAAS IN HIGH ELECTRON-DENSITY REGIME, Acta Physica Polonica. A, 92(4), 1997, pp. 727-732
Authors:
WANG SM
KARLSSON C
RORSMAN N
BERGH M
OLSSON E
ANDERSSON TG
Citation: Sm. Wang et al., GROWTH AND CHARACTERIZATION OF METAMORPHIC INXGA1-XAS INALAS(X-GREATER-THAN-OR-EQUAL-TO-0.8) MODULATION-DOPED HETEROSTRUCTURES ON GAAS USING A LINEARLY GRADED IN(ALGA)AS BUFFER LAYER/, Physica scripta. T, T69, 1997, pp. 325-331
Authors:
ROSLUND JH
ZSEBOK O
SWENSON G
ANDERSSON TG
Citation: Jh. Roslund et al., MOLECULAR-BEAM-EPITAXIAL GROWTH OF GA1-XINXSB ON GAAS SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 883-887
Authors:
WANG SM
KARLSSON C
RORSMAN N
BERGH M
OLSSON E
ANDERSSON TG
ZIRATH H
Citation: Sm. Wang et al., MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INXGA1-XAS 7-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS USING INALAS GRADED BUFFER, Journal of crystal growth, 175, 1997, pp. 1016-1021
Authors:
ANDERSSON TG
NOZAWA K
HORIKOSHI Y
Citation: Tg. Andersson et al., STUDIES OF GAN LAYERS GROWN ON SAPPHIRE USING AN RF-SOURCE, Journal of crystal growth, 175, 1997, pp. 117-121
Authors:
THORDSON JV
ANDERSSON TG
SWENSON G
SODERVALL U
Citation: Jv. Thordson et al., 2-DIMENSIONAL LIMITATIONS WHEN INCREASING THE SI-CONCENTRATION FROM DELTA-DOPING TO THIN SI-LAYERS IN GAAS, Journal of crystal growth, 175, 1997, pp. 234-237
Authors:
SJOLUND O
LIN HT
RICH DH
GHISONI M
LARSSON A
WANG S
THORDSSON J
ANDERSSON TG
Citation: O. Sjolund et al., CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT STUDY OF PARTIALLY RELAXED ALGAAS GAAS/INGAAS HETEROJUNCTION PHOTOTRANSISTORS UNDER OPERATING-CONDITIONS/, Journal of applied physics, 82(3), 1997, pp. 1438-1445
Authors:
DUBROVSKII YV
KHANIN YN
ANDERSSON TG
GENSER U
MAUD DK
PORTAL ZK
Citation: Yv. Dubrovskii et al., ZERO TUNNEL ANOMALIES IN STRUCTURES WITH SINGLE HETEROBARRIERS, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 109(3), 1996, pp. 868-875
Authors:
DUBROVSKII YV
KHANIN YN
VDOVIN EE
LARKIN IA
ANDERSSON TG
Citation: Yv. Dubrovskii et al., RESONANT-TUNNELING THROUGH A PSEUDO-QUANTUM WELL IN SINGLE-BARRIER HETEROSTRUCTURE, Surface science, 362(1-3), 1996, pp. 213-216
Authors:
ROSLUND JH
SWENSON G
ANDERSSON TG
Citation: Jh. Roslund et al., SI-DOPED AND UNDOPED GA1-XINXSB GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, Journal of applied physics, 80(11), 1996, pp. 6556-6558
Authors:
QURASHI US
IQBAL MZ
ANDERSSON TG
Citation: Us. Qurashi et al., PHOTOLUMINESCENCE STUDY OF AL DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 80(10), 1996, pp. 5932-5940
Authors:
PRABHAKARAN K
ANDERSSON TG
NOZAWA K
Citation: K. Prabhakaran et al., NATURE OF NATIVE-OXIDE ON GAN SURFACE AND ITS REACTION WITH AL, Applied physics letters, 69(21), 1996, pp. 3212-3214
Authors:
NILSSON PO
KANSKI J
THORDSON JV
ANDERSSON TG
NORDGREN J
GUO J
MAGNUSON M
Citation: Po. Nilsson et al., ELECTRONIC-STRUCTURE OF BURIED SI LAYERS IN GAAS(001) AS STUDIED BY SOFT-X-RAY EMISSION, Physical review. B, Condensed matter, 52(12), 1995, pp. 8643-8645
Authors:
KULIK LV
PETINOVA AV
KULAKOVSKII VD
ANDERSSON TG
WANG SM
LOMSADZE AV
Citation: Lv. Kulik et al., INTERACTION OF ABOVE-FERMI-EDGE MAGNETOEXCITON STATES FROM DIFFERENT SUBBANDS IN DENSE 2-DIMENSIONAL ELECTRON MAGNETOPLASMA, Physical review. B, Condensed matter, 51(24), 1995, pp. 17654-17659
Authors:
THORDSON JV
SONGPONGS P
SWENSON G
ANDERSSON TG
Citation: Jv. Thordson et al., GROWTH AND CHARACTERIZATION OF GAAS SI/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 696-699
Authors:
QURASHI US
IQBAL MZ
BABER N
ANDERSSON TG
Citation: Us. Qurashi et al., EFFECTS OF AL DOPING ON DEEP LEVELS IN MOLECULAR-BEAM-EPITAXY GAAS, Journal of applied physics, 78(8), 1995, pp. 5035-5041
Authors:
SHEN WZ
SHEN SC
TANG WG
WANG SM
ANDERSSON TG
Citation: Wz. Shen et al., OBSERVATION OF EXCITONIC POLARITON AND BROADENING OF ROOM-TEMPERATUREEXCITON IN STRAINED INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 78(2), 1995, pp. 1178-1182
Authors:
VDOVIN EE
DUBROVSKII YV
LARKIN IA
KHANIN YN
ANDERSSON TG
Citation: Ee. Vdovin et al., REFLECTION OF ELECTRONS FROM AN N- N+ JUNCTION IN GAAS/, JETP letters, 61(7), 1995, pp. 576-580