AAAAAA
Results:
1-8
|
Results: 8
Authors:
ARNAULT JC
HUBERT S
LENORMAND F
Citation: Jc. Arnault et al., SILICON ETCHING DURING THE HFCVD DIAMOND GROWTH, JOURNAL OF PHYSICAL CHEMISTRY B, 102(25), 1998, pp. 4856-4864
Authors:
ARNAULT JC
LANG B
LENORMAND F
Citation: Jc. Arnault et al., HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION DIAMOND GROWTH-KINETICS ON AN EPITAXIAL COSI2 SURFACE MONITORED BY 3 ELECTRON SPECTROSCOPIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 494-501
Authors:
DEMUYNCK L
ARNAULT JC
SPEISSER C
POLINI R
LENORMAND F
Citation: L. Demuynck et al., MECHANISMS OF CVD DIAMOND NUCLEATION AND GROWTH ON MECHANICALLY SCRATCHED AND VIRGIN SI(100) SURFACES, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 235-239
Authors:
DEMUYNCK L
ARNAULT JC
POLINI R
LENORMAND F
Citation: L. Demuynck et al., CVD DIAMOND NUCLEATION AND GROWTH ON SCRATCHED AND VIRGIN SI(100) SURFACES INVESTIGATED BY IN-SITU ELECTRON-SPECTROSCOPY, Surface science, 377(1-3), 1997, pp. 871-875
Authors:
ARNAULT JC
BUBENDORFF JL
PIMPINELLI A
BUCHER JP
Citation: Jc. Arnault et al., TRANSITION IN THE GROWTH-KINETICS OF VACANCY ISLANDS ON NBSE2, Surface science, 348(1-2), 1996, pp. 185-191
Authors:
LENORMAND F
ARNAULT JC
PARASOTE V
FAYETTE L
MARCUS B
MERMOUX M
Citation: F. Lenormand et al., EARLY STAGES OF DIAMOND GROWTH BY CHEMICAL-VAPOR-DEPOSITION MONITOREDBOTH BY ELECTRON SPECTROSCOPIES AND MICROSTRUCTURAL PROBES, Journal of applied physics, 80(3), 1996, pp. 1830-1845
Authors:
ARNAULT JC
TEMPLIER C
DELAFOND J
BOUFFARD S
GAREM H
Citation: Jc. Arnault et al., TEM AND AFM STUDY OF GOLD THIN-FILM NUCLEATION AND GROWTH, Surface & coatings technology, 71(1), 1995, pp. 45-52
Authors:
ARNAULT JC
DELAFOND J
TEMPLIER C
CHAUMONT J
ENEA O
Citation: Jc. Arnault et al., 1ST STAGES STUDY OF HIGH-ENERGY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1384-1387
Risultati:
1-8
|