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Results:
1-25
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Results: 25
Authors:
TOIVONEN M
SAVOLAINEN P
ASONEN H
PESSA M
Citation: M. Toivonen et al., SOLID-SOURCE MBE FOR GROWTH OF LASER-DIODE MATERIALS, Journal of crystal growth, 175, 1997, pp. 37-41
Authors:
ZHANG G
OVTCHINNIKOV A
NAPPI J
SMEKALIN K
SAVOLAINEN P
PESSA M
ASONEN H
Citation: G. Zhang et al., FAR-FIELD, EFFICIENCY AND LOSS OF 980NM INGAAS GAINASP/GAINP SCH QUANTUM-WELL LASERS/, Electronics Letters, 33(6), 1997, pp. 489-491
Authors:
SAVOLAINEN P
TOIVONEN M
ASONEN H
MURISON R
Citation: P. Savolainen et al., LOW-THRESHOLD 1.5-MU-M QUATERNARY QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, JPN J A P 2, 35(7B), 1996, pp. 900-902
Authors:
TOIVONEN M
SAVOLAINEN P
ASONEN H
MURISON R
Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED 1.3-MU-M INASP INGAP/INP MULTIQUANTUM-WELL LASERSFOR HIGH-TEMPERATURE OPERATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1736-1738
Authors:
SAVOLAINEN P
TOIVONEN M
ASONEN H
PESSA M
MURISON R
Citation: P. Savolainen et al., HIGH-PERFORMANCE 98O-NM STRAINED-LAYER GAINAS-GAINASP-GAINP QUANTUM-WELL LASERS GROWN BY ALL SOLID-SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 8(8), 1996, pp. 986-988
Authors:
PESSA M
NAPPI J
SAVOLAINEN P
TOIVONEN M
MURISON R
OVTCHINNIKOV A
ASONEN H
Citation: M. Pessa et al., STATE-OF-THE-ART ALUMINUM-FREE 980-NM LASER-DIODES, Journal of lightwave technology, 14(10), 1996, pp. 2356-2361
Authors:
MAKINEN J
LAINE T
PARTANEN J
SAARINEN K
HAUTOJARVI P
TAPPURA K
HAKKARAINEN T
ASONEN H
PESSA M
KAUPPINEN JP
VANTTINEN K
PAALANEN MA
LIKONEN J
Citation: J. Makinen et al., DONOR LEVELS AND THE MICROSCOPIC STRUCTURE OF THE DX CENTER IN N-TYPESI-DOPED ALXGA0.51-IN0.49P GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 53(12), 1996, pp. 7851-7862
Authors:
WESTERGREN U
WILLEN B
ASONEN H
Citation: U. Westergren et al., 20GHZ BANDWIDTH MONOLITHIC OPTOELECTRONIC RECEIVER BASED ON SSMBE-GROWN INP HBT TECHNOLOGY, Electronics Letters, 32(18), 1996, pp. 1719-1720
Authors:
VANTTINEN K
LAMMASNIEMI J
RAKENNUS K
ASONEN H
JURVA R
KARIOJA P
Citation: K. Vanttinen et al., A GA0.51IN0.49P GAAS BASED PHOTOVOLTAIC CONVERTER FOR 2-DIRECTIONAL OPTICAL POWER AND DATA-TRANSMISSION/, Progress in photovoltaics, 3(1), 1995, pp. 57-63
Authors:
WILLEN B
WESTERGREN U
ASONEN H
Citation: B. Willen et al., HIGH-GAIN, HIGH-SPEED INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION/, IEEE electron device letters, 16(11), 1995, pp. 479-481
Authors:
PESSA M
ASONEN H
Citation: M. Pessa et H. Asonen, RECENT ADVANCES IN COMPOUND SEMICONDUCTOR TECHNOLOGY, Optical engineering, 34(9), 1995, pp. 2521-2526
Authors:
WILLEN B
ASONEN H
TOIVONEN M
Citation: B. Willen et al., INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 31(17), 1995, pp. 1514-1515
Authors:
TOIVONEN M
SALOKATVE A
JALONEN M
NAPPI J
ASONEN H
PESSA M
MURISON R
Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER, Electronics Letters, 31(10), 1995, pp. 797-799
Authors:
TOIVONEN M
JALONEN M
SALOKATVE A
NAPPI J
SAVOLAINEN P
PESSA M
ASONEN H
Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)/, Applied physics letters, 67(16), 1995, pp. 2332-2334
Authors:
ZHANG G
ASONEN H
PESSA M
Citation: G. Zhang et al., INCORPORATION OF GROUP-V ELEMENTS IN GAXIN1-XASYP1-Y LAYERS GROWN ON GAAS BY GAS-SOURCE MOLECULAR BEAN EPITAXY, JPN J A P 2, 33(8A), 1994, pp. 120001049-120001051
Authors:
ZHANG G
NAPPI J
ASONEN H
PESSA M
Citation: G. Zhang et al., TENSILE-STRAINED GAASP GAINASP/GAINP QUANTUM-WELL LASERS/, IEEE photonics technology letters, 6(1), 1994, pp. 1-3
Authors:
ASONEN H
OVTCHINNIKOV A
ZHANG GD
NAPPI J
SAVOLAINEN P
PESSA M
Citation: H. Asonen et al., ALUMINUM-FREE 980-NM GAINAS GAINASP/GAINP PUMP LASERS/, IEEE journal of quantum electronics, 30(2), 1994, pp. 415-423
Authors:
NAPPI J
OVTCHINNIKOV A
ASONEN H
SAVOLAINEN P
PESSA M
Citation: J. Nappi et al., LIMITATIONS OF 2-DIMENSIONAL PASSIVE WAVE-GUIDE MODEL FOR LAMBDA=980 NM AL-FREE RIDGE-WAVE-GUIDE LASERS, Applied physics letters, 64(17), 1994, pp. 2203-2205
Authors:
ZHANG G
ASONEN H
PESSA M
Citation: G. Zhang et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAXIN1-XASYP1-Y ON GAAS FOR PHOTONIC AND ELECTRONIC APPLICATIONS, Journal de physique. IV, 3(C3), 1993, pp. 441-448
Authors:
ASONEN H
NAPPI J
OVTCHINNIKOV A
SAVOLAINEN P
ZHANG G
RIES R
PESSA M
Citation: H. Asonen et al., HIGH-POWER OPERATION OF ALUMINUM-FREE (LAMBDA = 0.98-MU-M) PUMP LASERFOR ERBIUM-DOPED FIBER AMPLIFIER, IEEE photonics technology letters, 5(6), 1993, pp. 589-591
Authors:
PESSA M
NAPPI J
ZHANG G
OVTCHINNIKOV A
ASONEN H
Citation: M. Pessa et al., ALUMINUM-FREE 980 NM LASER-DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 211-216
Authors:
TAPPURA K
ASONEN H
Citation: K. Tappura et H. Asonen, GROWTH OF GA0.29IN0.71AS0.61P0.39 (LAMBDA-APPROXIMATE-TO-1.3 MU-M) ONINP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 217-220
Authors:
ZHANG G
OVTCHINNIKOV A
NAPPI J
HAKKARAINEN T
ASONEN H
Citation: G. Zhang et al., GSMBE GROWTH OF GAINASP ON GAAS SUBSTRATES AND ITS APPLICATION TO 0.98 MU-M LASERS, Journal of crystal growth, 127(1-4), 1993, pp. 1033-1036
Authors:
ZHANG GD
OVTCHINNIKOV A
NAPPI J
ASONEN H
PESSA M
Citation: Gd. Zhang et al., OPTIMIZATION AND CHARACTERISTICS OF AL-FREE STRAINED-LAYER INGAAS GAINASP/GAINP SCH-QW LASERS (LAMBDA-SIMILAR-TO-980-NM) GROWN BY GAS-SOURCE MBE/, IEEE journal of quantum electronics, 29(6), 1993, pp. 1943-1949
Authors:
ZHANG G
NAPPI J
OVTCHINNIKOV A
ASONEN H
Citation: G. Zhang et al., ALUMINUM-FREE GAAS GAINASP QUANTUM-WELL LASERS/, Electronics Letters, 29(5), 1993, pp. 429-431
Risultati:
1-25
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