Authors: ATHAVALE SD ECONOMOU DJ

Citation: Sd. Athavale et Dj. Economou, REALIZATION OF ATOMIC LAYER ETCHING OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3702-3705

Authors: HOFFMAN DM RANGARAJAN SP ATHAVALE SD ECONOMOU DJ LIU JR ZHENG ZS CHU WK

Citation: Dm. Hoffman et al., CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM AND GALLIUM NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 306-311

Authors: HOFFMAN DM RANGARAJAN P ATHAVALE SD ECONOMOU DJ LIU JR ZHENG ZS CHU WK

Citation: Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 820-825

Authors: ATHAVALE SD ECONOMOU DJ

Citation: Sd. Athavale et Dj. Economou, MOLECULAR-DYNAMICS SIMULATION OF ATOMIC LAYER ETCHING OF SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 966-971

Authors: HOFFMAN DM RANGARAJAN SP ATHAVALE SD DESHMUKH SC ECONOMOU DJ LIU JR ZHENG ZS CHU WK

Citation: Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS FROM A METAL-ORGANIC PRECURSOR, Journal of materials research, 9(12), 1994, pp. 3019-3021