Authors: AVERBUKH BY BEREGULIN EV IVANOV SV KOPEV PS YAROSHETSKII ID

Citation: By. Averbukh et al., FAST SUBMILLIMETER PHOTOCONDUCTIVITY IN 2 -DIMENSIONAL ELECTRON-GAS AT GAAS-ALGAAS HETEROTRANSITION BOUNDARY, Fizika tverdogo tela, 38(10), 1996, pp. 3144-3151

Authors: ANDREEV AA ANDRIANOV AV AVERBUKH BY MAVLYANOV R

Citation: Aa. Andreev et al., INJECTION ELECTROLUMINESCENCE OF PIN-THIN -FILMED STRUCTURES BASED ONHYDROGENIZED SILICON PREPARED UNDER SUPERHIGH SILANE DILUTION WITH HYDROGEN, Fizika tverdogo tela, 38(1), 1996, pp. 19-29

Authors: AVERBUKH BY ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID

Citation: By. Averbukh et al., ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/, Semiconductors, 29(4), 1995, pp. 327-330

Authors: ZINOVEV NN ANDRIANOV AV AVERBUKH BY YAROSHETSKII ID CHENG TS JENKINS LC HOOPER SE FOXON CT ORTON JW

Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121

Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID AVERBUKH BY

Citation: Av. Andrianov et al., ENHANCED RAMAN-SCATTERING IN POROUS SILICON, Semiconductors, 28(12), 1994, pp. 1213-1215