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Results:
1-14
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Results: 14
Authors:
ZHANG XG
LI P
ZHAO G
PARENT DW
JAIN FC
AYERS JE
Citation: Xg. Zhang et al., REMOVAL OF THREADING DISLOCATIONS FROM PATTERNED HETEROEPITAXIAL SEMICONDUCTORS BY GLIDE TO SIDEWALLS, Journal of electronic materials, 27(11), 1998, pp. 1248-1253
Authors:
ZHANG XG
KALISETTY S
ROBINSON J
ZHAO G
PARENT DW
AYERS JE
JAIN FC
Citation: Xg. Zhang et al., STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 26(6), 1997, pp. 697-704
Authors:
PARENT DW
KALISETTY S
ZHANG XG
ZHAO G
ZAPPONE W
ROBINSON J
HELLER E
AYERS JE
JAIN FC
Citation: Dw. Parent et al., A COMPARISON OF ETHYL IODIDE AND HYDROGEN-CHLORIDE FOR DOPING ZNSE GROWN BY PHOTOASSISTED MOVPE, Journal of electronic materials, 26(6), 1997, pp. 710-714
Authors:
ZHANG XG
KALISETTY S
ROBINSON J
ZHAO G
PARENT DW
AYERS JE
JAIN FC
Citation: Xg. Zhang et al., STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 174(1-4), 1997, pp. 726-732
Authors:
BAO KX
MO R
ZHANG XG
KALISETTY S
GOKHALE M
ROBINSON J
ZHAO G
AYERS JE
JAIN FC
Citation: Kx. Bao et al., COMPOSITIONAL CONTROL OF CDXZN1-XSE GROWN BY PHOTOASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 497-502
Authors:
GOKHALE MR
BAO KX
HEALEY PD
JAIN FC
AYERS JE
Citation: Mr. Gokhale et al., ROLE OF CADMIUM IN ENHANCING OPTICAL-PROPERTIES AND CHLORINE DOPING OF PHOTO-ASSISTED OMVPE-GROWN ZNSE, Journal of electronic materials, 25(2), 1996, pp. 207-212
Authors:
HEALEY PD
AYERS JE
Citation: Pd. Healey et Je. Ayers, THE INSTRUMENTAL BROADENING FUNCTION OF THE BARTELS 5-CRYSTAL X-RAY DIFFRACTOMETER, Acta crystallographica. Section A, Foundations of crystallography, 52, 1996, pp. 245-250
Authors:
GOKHALE MR
BAO KX
HEALEY PD
JAIN FC
AYERS JE
Citation: Mr. Gokhale et al., FACTORS INFLUENCING LOW-TEMPERATURE PHOTO-ASSISTED OMVPE GROWTH OF ZNSE, Journal of crystal growth, 165(1-2), 1996, pp. 25-30
Authors:
KALISETTY S
GOKHALE M
BAO K
AYERS JE
JAIN FC
Citation: S. Kalisetty et al., THE INFLUENCE OF IMPURITIES ON THE DISLOCATION BEHAVIOR IN HETEROEPITAXIAL ZNSE ON GAAS, Applied physics letters, 68(12), 1996, pp. 1693-1695
Authors:
HEALEY PD
BAO K
GOKHALE M
AYERS JE
JAIN FC
Citation: Pd. Healey et al., X-RAY DETERMINATION OF THE DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS USING A BARTELS 5-CRYSTAL DIFFRACTOMETER, Acta crystallographica. Section A, Foundations of crystallography, 51, 1995, pp. 498-503
Authors:
AYERS JE
Citation: Je. Ayers, NEW MODEL FOR THE THICKNESS AND MISMATCH DEPENDENCIES OF THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROEPITAXIAL LAYERS, Journal of applied physics, 78(6), 1995, pp. 3724-3726
Authors:
BAO K
HEALEY PD
GOKHALE M
AYERS JE
JAIN FC
Citation: K. Bao et al., PROPERTIES OF VAPOR-PHASE EPITAXIAL ZINC SELENIDE CODOPED WITH CADMIUM AND CHLORINE, Applied physics letters, 67(8), 1995, pp. 1098-1100
Authors:
AYERS JE
SCHOWALTER LJ
Citation: Je. Ayers et Lj. Schowalter, MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS - COMMENT, Physical review letters, 72(25), 1994, pp. 4055-4055
Authors:
AYERS JE
Citation: Je. Ayers, THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION, Journal of crystal growth, 135(1-2), 1994, pp. 71-77
Risultati:
1-14
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