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Results: 1-9 |
Results: 9
Advanced III-V solar cell structures grown by MOVPE
Authors: Bett, AW Adelhelm, R Agert, C Beckert, R Dimroth, F Schubert, U
Citation: Aw. Bett et al., Advanced III-V solar cell structures grown by MOVPE, SOL EN MAT, 66(1-4), 2001, pp. 541-550
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
Authors: Agert, C Dimroth, F Schubert, U Bett, AW Leu, S Stolz, W
Citation: C. Agert et al., High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios, SOL EN MAT, 66(1-4), 2001, pp. 637-644
MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor
Authors: Agert, C Lanyi, P Bett, AW
Citation: C. Agert et al., MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor, J CRYST GR, 225(2-4), 2001, pp. 426-430
Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
Authors: Agert, C Lanyi, P Sulima, OV Stolz, W Bett, AW
Citation: C. Agert et al., Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor, IEE P-OPTO, 147(3), 2000, pp. 188-192
Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices
Authors: Smith, LM Rushworth, SA Ravetz, MS Odedra, R Kanjolia, R Agert, C Dimroth, F Schubert, U Bett, AW
Citation: Lm. Smith et al., Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices, J CRYST GR, 221, 2000, pp. 86-90
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
Authors: Wagner, A Ellmers, C Hohnsdorf, F Koch, J Agert, C Leu, S Hofmann, M Stolz, W Ruhle, WW
Citation: A. Wagner et al., (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range, APPL PHYS L, 76(3), 2000, pp. 271-272
Confinement effects in bulk samples derived from the Franz-Keldysh effect
Authors: Kolbe, HJ Agert, C Stolz, W Weiser, G
Citation: Hj. Kolbe et al., Confinement effects in bulk samples derived from the Franz-Keldysh effect, PHYS REV B, 59(23), 1999, pp. 14896-14898
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime
Authors: Ellmers, C Hohnsdorf, F Koch, J Agert, C Leu, S Karaiskaj, D Hofmann, M Stolz, W Ruhle, WW
Citation: C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
Authors: Hohnsdorf, F Koch, J Agert, C Stolz, W
Citation: F. Hohnsdorf et al., Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy), J CRYST GR, 195(1-4), 1998, pp. 391-396
Risultati: 1-9 |