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Results: 1-13 |
Results: 13
Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice
Authors: Hong, YG Tu, CW Ahrenkiel, RK
Citation: Yg. Hong et al., Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice, J CRYST GR, 227, 2001, pp. 536-540
Auger recombination in low-band-gap n-type InGaAs
Authors: Metzger, WK Wanlass, MW Ellingson, RJ Ahrenkiel, RK Carapella, JJ
Citation: Wk. Metzger et al., Auger recombination in low-band-gap n-type InGaAs, APPL PHYS L, 79(20), 2001, pp. 3272-3274
Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates
Authors: Ahrenkiel, RK Johnston, SW Webb, JD Gedvilas, LM Carapella, JJ Wanlass, MW
Citation: Rk. Ahrenkiel et al., Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates, APPL PHYS L, 78(8), 2001, pp. 1092-1094
Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000)
Authors: Ahrenkiel, RK Johnston, SW Keyes, BM Friedman, DJ Vernon, SM
Citation: Rk. Ahrenkiel et al., Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000), APPL PHYS L, 78(4), 2001, pp. 559-559
Auger recombination in heavily carbon-doped GaAs
Authors: Ahrenkiel, RK Ellingson, R Metzger, W Lubyshev, DI Liu, WK
Citation: Rk. Ahrenkiel et al., Auger recombination in heavily carbon-doped GaAs, APPL PHYS L, 78(13), 2001, pp. 1879-1881
Injection level lifetime spectroscopy of impurities in semiconductors
Authors: Ahrenkiel, RK Keyes, BM Johnston, S
Citation: Rk. Ahrenkiel et al., Injection level lifetime spectroscopy of impurities in semiconductors, SURF ENG, 16(1), 2000, pp. 54-60
Deep-level impurities in CdTe/CdS thin-film solar cells
Authors: Balcioglu, A Ahrenkiel, RK Hasoon, F
Citation: A. Balcioglu et al., Deep-level impurities in CdTe/CdS thin-film solar cells, J APPL PHYS, 88(12), 2000, pp. 7175-7178
Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition
Authors: Ahrenkiel, RK Johnston, SW Keyes, BM Friedman, DJ
Citation: Rk. Ahrenkiel et al., Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition, APPL PHYS L, 77(23), 2000, pp. 3794-3796
Evidence of an oxygen recombination center in p(+)-n GaInNAs solar cells
Authors: Balcioglu, A Ahrenkiel, RK Friedman, DJ
Citation: A. Balcioglu et al., Evidence of an oxygen recombination center in p(+)-n GaInNAs solar cells, APPL PHYS L, 76(17), 2000, pp. 2397-2399
Fourier transform-luminescence spectroscopy of semiconductor thin films and devices
Authors: Webb, JD Keyes, BM Ahrenkiel, RK Wanlass, MW Ramanathan, K Gedvilas, LM Olson, MR Dippo, P Jones, KM
Citation: Jd. Webb et al., Fourier transform-luminescence spectroscopy of semiconductor thin films and devices, VIB SPECTR, 21(1-2), 1999, pp. 3-15
Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe
Authors: Bose, DN Ahrenkiel, RK Bhunia, S
Citation: Dn. Bose et al., Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe, J APPL PHYS, 86(11), 1999, pp. 6599-6601
Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells
Authors: Karam, NH King, RR Cavicchi, BT Krut, DD Ermer, JH Haddad, M Cai, L Joslin, DE Takahashi, M Eldredge, JW Nishikawa, WT Lillington, DR Keyes, BM Ahrenkiel, RK
Citation: Nh. Karam et al., Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells, IEEE DEVICE, 46(10), 1999, pp. 2116-2125
Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As
Authors: Ahrenkiel, SP Johnston, SW Ahrenkiel, RK Arent, DJ Hanna, MC Wanlass, MW
Citation: Sp. Ahrenkiel et al., Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As, APPL PHYS L, 74(23), 1999, pp. 3534-3536
Risultati: 1-13 |