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Results: 1-8 |
Results: 8
A model of high- and low-temperature phosphorus diffusion in silicon by a dual pair mechanism
Authors: Aleksandrov, OV
Citation: Ov. Aleksandrov, A model of high- and low-temperature phosphorus diffusion in silicon by a dual pair mechanism, SEMICONDUCT, 35(11), 2001, pp. 1231-1241
The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium
Authors: Aleksandrov, OV Zakhar'in, AO Sobolev, NA Nikolaev, YA
Citation: Ov. Aleksandrov et al., The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium, SEMICONDUCT, 34(5), 2000, pp. 510-513
Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers
Authors: Aleksandrov, OV Nikolaev, YA Sobolev, NA
Citation: Ov. Aleksandrov et al., Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers, SEMICONDUCT, 34(1), 2000, pp. 1-5
Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties
Authors: Sobolev, NA Emel'yanov, AM Kyutt, RN Nikolaev, YA Shek, EI Aleksandrov, OV Zachar'in, AO Vdovin, VI Makoviichuk, MI Parshin, EO Yakimenko, AN
Citation: Na. Sobolev et al., Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties, IAN FIZ, 64(2), 2000, pp. 258-263
Redistribution of erbium during the crystallization of buried amorphous silicon layers
Authors: Aleksandrov, OV Nikolaev, YA Sobolev, NA Sakharov, VI Serenkov, IT Kudryavtsev, YA
Citation: Ov. Aleksandrov et al., Redistribution of erbium during the crystallization of buried amorphous silicon layers, SEMICONDUCT, 33(6), 1999, pp. 606-609
Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon
Authors: Aleksandrov, OV Nikolaev, YA Sobolev, NA
Citation: Ov. Aleksandrov et al., Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon, SEMICONDUCT, 33(1), 1999, pp. 101-105
Clinicofunctional efficiency of a course interval normobaric hypoxytherapyin patients with chronic obstructive bronchitis and bronchial asthma
Authors: Aleksandrov, OV Struchkov, PV Vinitskaya, RS Tykotskaya, MA Polunova, VM Scherbatykh, OV Zinova, IL Togoev, AM
Citation: Ov. Aleksandrov et al., Clinicofunctional efficiency of a course interval normobaric hypoxytherapyin patients with chronic obstructive bronchitis and bronchial asthma, TERAPEVT AR, 71(3), 1999, pp. 28-32
Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon
Authors: Aleksandrov, OV Nikolaev, YA Sobolev, NA
Citation: Ov. Aleksandrov et al., Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon, SEMICONDUCT, 32(12), 1998, pp. 1266-1269
Risultati: 1-8 |