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Citation: Vl. Alperovich et al., Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers, SEMICONDUCT, 35(9), 2001, pp. 1054-1062

Authors: Alperovich, VL Tereshchenko, OE Litvinov, AN Terekhov, AS

Citation: Vl. Alperovich et al., Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111), APPL SURF S, 175, 2001, pp. 175-180

Authors: Alperovich, VL Bolkhovityanov, YB Chikichev, SI Jaroshevich, AS Paulish, AG Terekhov, AS

Citation: Vl. Alperovich et al., Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications, OPTOEL PROP, 9, 2000, pp. 651-726