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Citation: S. Kaya et al., Indication of velocity overshoot in strained Si0.8Ge0.2 p-channel MOSFETs, SEMIC SCI T, 15(6), 2000, pp. 573-578

Authors: Ansaripour, G Braithwaite, G Agan, S Whall, TE Parker, EHC

Citation: G. Ansaripour et al., Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor, MICROEL ENG, 51-2, 2000, pp. 541-546

Authors: Ansaripour, G Braithwaite, G Myronov, M Mironov, OA Parker, EHC Whall, TE

Citation: G. Ansaripour et al., Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures, APPL PHYS L, 76(9), 2000, pp. 1140-1142