Authors: Vilela, MF Anselm, KA Sooriar, N Johnson, JL Lin, CH Brown, GJ Mahalingam, K Saxler, A Szmulowicz, F

Citation: Mf. Vilela et al., InAs/InGaSb photodetectors grown on GaAs bonded substrates, J ELEC MAT, 30(7), 2001, pp. 798-801

Authors: Hong, M Anselm, KA Kwo, J Ng, HM Baillargeon, JN Kortan, AR Mannaerts, JP Cho, AY Lee, CM Chyi, JI Lay, TS

Citation: M. Hong et al., Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes, J VAC SCI B, 18(3), 2000, pp. 1453-1456

Authors: Yuan, P Hansing, CC Anselm, KA Lenox, CV Nie, H Holmes, AL Streetman, BC Campbell, JC

Citation: P. Yuan et al., Impact ionization characteristics of III-V semiconductors for a wide rangeof multiplication region thicknesses, IEEE J Q EL, 36(2), 2000, pp. 198-204

Authors: Yuan, P Anselm, KA Hu, C Nie, H Lenox, C Holmes, AL Streetman, BC Campbell, JC McIntyre, RJ

Citation: P. Yuan et al., A new look at impact ionization - Part II: Gain and noise in short avalanche photodiodes, IEEE DEVICE, 46(8), 1999, pp. 1632-1639