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Results: 1-9 |
Results: 9
Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure
Authors: Dziuba, Z Gorska, M Antoszewski, J Babinski, A Kozodoy, P Keller, S Keller, B DenBaars, SP Mishra, UK
Citation: Z. Dziuba et al., Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure, APPL PHYS A, 72(6), 2001, pp. 691-698
p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas
Authors: White, J Pal, R Dell, JM Musca, CA Antoszewski, J Faraone, L Burke, P
Citation: J. White et al., p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas, J ELEC MAT, 30(6), 2001, pp. 762-767
Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion
Authors: Antoszewski, J Musca, CA Dell, JM Faraone, L
Citation: J. Antoszewski et al., Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion, J ELEC MAT, 29(6), 2000, pp. 837-840
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
Authors: Dell, JM Antoszewski, J Rais, MH Musca, C White, JK Nener, BD Faraone, L
Citation: Jm. Dell et al., HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology, J ELEC MAT, 29(6), 2000, pp. 841-848
HgCdTe photovoltaic detectors fabricated using a new junction formation technology
Authors: Rais, MH Musca, CA Dell, JM Antoszewski, J Nener, BD Faraone, L
Citation: Mh. Rais et al., HgCdTe photovoltaic detectors fabricated using a new junction formation technology, MICROELEC J, 31(7), 2000, pp. 545-551
Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion
Authors: Rais, MH Musca, CA Antoszewski, J Dell, JM Nener, BD Faraone, L
Citation: Mh. Rais et al., Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion, J CRYST GR, 214, 2000, pp. 1106-1110
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
Authors: Antoszewski, J Gracey, M Dell, JM Faraone, L Fisher, TA Parish, G Wu, YF Mishra, UK
Citation: J. Antoszewski et al., Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors, J APPL PHYS, 87(8), 2000, pp. 3900-3904
Quantitative mobility spectrum analysis (QMSA) for Hall characterization of electrons and holes in anisotropic bands
Authors: Vurgaftman, I Meyer, JR Hoffman, CA Cho, S Ketterson, JB Faraone, L Antoszewski, J Lindemuth, JR
Citation: I. Vurgaftman et al., Quantitative mobility spectrum analysis (QMSA) for Hall characterization of electrons and holes in anisotropic bands, J ELEC MAT, 28(5), 1999, pp. 548-552
Improved quantitative mobility spectrum analysis for Hall characterization
Authors: Vurgaftman, I Meyer, JR Hoffman, CA Redfern, D Antoszewski, J Faraone, L Lindemuth, JR
Citation: I. Vurgaftman et al., Improved quantitative mobility spectrum analysis for Hall characterization, J APPL PHYS, 84(9), 1998, pp. 4966-4973
Risultati: 1-9 |