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Results: 1-9 |
Results: 9

Authors: Apostolopoulos, G Boukos, N Travlos, A Herfort, J Ploog, KH
Citation: G. Apostolopoulos et al., Extending the epitaxial thickness limit in low-substrate-temperature-grownGaAs, APPL PHYS L, 79(21), 2001, pp. 3422-3424

Authors: Herfort, J Apostolopoulos, G Friedland, KJ Kostial, H Ulrici, W Daweritz, L Leitner, M Glas, P Ploog, KH
Citation: J. Herfort et al., In situ controlled growth of low-temperature GaAs and its application for mode-locking devices, JPN J A P 1, 39(4B), 2000, pp. 2452-2456

Authors: Krunz, M Apostolopoulos, G
Citation: M. Krunz et G. Apostolopoulos, Efficient support for interactive scanning operations in MPEG-based video-on-demand systems, MULTIMEDI S, 8(1), 2000, pp. 20-36

Authors: Papastaikoudis, C Giannouri, M Apostolopoulos, G Papastaikoudi, I
Citation: C. Papastaikoudis et al., Weak localization and Coulomb interaction in Zr71Rh29 coevaporated thin films, PHYSICA B, 284, 2000, pp. 1938-1939

Authors: Apostolopoulos, G Peris, V Pradhan, P Saha, D
Citation: G. Apostolopoulos et al., Securing electronic commerce: Reducing the SSI overhead, IEEE NETW, 14(4), 2000, pp. 8-16

Authors: Apostolopoulos, G Herfort, J Daweritz, L Ploog, KH Luysberg, M
Citation: G. Apostolopoulos et al., Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy, PHYS REV L, 84(15), 2000, pp. 3358-3361

Authors: Apostolopoulos, G Guerin, R Kamat, S Orda, A Tripathi, SK
Citation: G. Apostolopoulos et al., Intradomain QoS routing in IP networks: A feasibility and cost/benefit analysis, IEEE NETW, 13(5), 1999, pp. 42-54

Authors: Apostolopoulos, G Herfort, J Ulrici, W Daweritz, L Ploog, KH
Citation: G. Apostolopoulos et al., In situ reflectance-difference spectroscopy of GaAs grown at low temperatures, PHYS REV B, 60(8), 1999, pp. R5145-R5148

Authors: Leitner, M Glas, P Sandrock, T Wrage, M Apostolopoulos, G Riedel, A Kostial, H Herfort, J Friedland, KJ Daweritz, L
Citation: M. Leitner et al., Self-starting mode locking of a Nd : glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs, OPTICS LETT, 24(22), 1999, pp. 1567-1569
Risultati: 1-9 |