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Results: 1-6 |
Results: 6

Authors: Arbiol, J Gorostiza, P Cirera, A Cornet, A Morante, JR
Citation: J. Arbiol et al., In situ analysis of the conductance of SnO2 crystalline nanoparticles in the presence of oxidizing or reducing atmosphere by scanning tunneling microscopy, SENS ACTU-B, 78(1-3), 2001, pp. 57-63

Authors: Amimer, K Georgakilas, A Androulidaki, M Tsagaraki, K Pavelescu, M Mikroulis, S Constantinidis, G Arbiol, J Peiro, F Cornet, A Calamiotou, M Kuzmik, J Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308

Authors: Diaz, R Arbiol, J Cirera, A Sanz, F Peiro, F Cornet, A Morante, JR
Citation: R. Diaz et al., Electroless addition of catalytic pd to SnO2 nanopowders, CHEM MATER, 13(11), 2001, pp. 4362-4366

Authors: Cabot, A Arbiol, J Morante, JR Weimar, U Barsan, N Gopel, W
Citation: A. Cabot et al., Analysis of the noble metal catalytic additives introduced by impregnationof as obtained SnO2 sol-gel nanocrystals for gas sensors, SENS ACTU-B, 70(1-3), 2000, pp. 87-100

Authors: Arbiol, J Peiro, F Cornet, A Michelakis, K Georgakilas, A
Citation: J. Arbiol et al., Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures, J VAC SCI B, 17(6), 1999, pp. 2540-2544

Authors: Arbiol, J Peiro, F Cornet, A Morante, JR Michelakis, K Georgakilas, A
Citation: J. Arbiol et al., Comparison of homogeneously grown and temperature-graded InAlAs buffers inthe range 400-560 degrees C: effects on surface morphology and layer stability, THIN SOL FI, 357(1), 1999, pp. 61-65
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