Authors:
Arbiol, J
Gorostiza, P
Cirera, A
Cornet, A
Morante, JR
Citation: J. Arbiol et al., In situ analysis of the conductance of SnO2 crystalline nanoparticles in the presence of oxidizing or reducing atmosphere by scanning tunneling microscopy, SENS ACTU-B, 78(1-3), 2001, pp. 57-63
Authors:
Amimer, K
Georgakilas, A
Androulidaki, M
Tsagaraki, K
Pavelescu, M
Mikroulis, S
Constantinidis, G
Arbiol, J
Peiro, F
Cornet, A
Calamiotou, M
Kuzmik, J
Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308
Authors:
Cabot, A
Arbiol, J
Morante, JR
Weimar, U
Barsan, N
Gopel, W
Citation: A. Cabot et al., Analysis of the noble metal catalytic additives introduced by impregnationof as obtained SnO2 sol-gel nanocrystals for gas sensors, SENS ACTU-B, 70(1-3), 2000, pp. 87-100
Authors:
Arbiol, J
Peiro, F
Cornet, A
Michelakis, K
Georgakilas, A
Citation: J. Arbiol et al., Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures, J VAC SCI B, 17(6), 1999, pp. 2540-2544
Authors:
Arbiol, J
Peiro, F
Cornet, A
Morante, JR
Michelakis, K
Georgakilas, A
Citation: J. Arbiol et al., Comparison of homogeneously grown and temperature-graded InAlAs buffers inthe range 400-560 degrees C: effects on surface morphology and layer stability, THIN SOL FI, 357(1), 1999, pp. 61-65