Authors:
Nishinohara, KT
Akasaka, Y
Saito, T
Yagishita, A
Murakoshi, A
Suguro, K
Arikado, T
Citation: Kt. Nishinohara et al., Surface channel metal gate complementary MOS with light counter doping andsingle work function gate electrode, JPN J A P 1, 40(4B), 2001, pp. 2603-2606
Authors:
Inumiya, S
Yagishita, A
Saito, T
Hotta, M
Ozawa, Y
Suguro, K
Tsunashima, Y
Arikado, T
Citation: S. Inumiya et al., Sub-1.3 nm amorphous tantalum pentoxide gate dielectrics for damascene metal gate transistors, JPN J A P 1, 39(4B), 2000, pp. 2087-2093
Authors:
Saito, T
Yagishita, A
Inumiya, S
Nakajima, K
Akasaka, Y
Ozawa, Y
Yano, H
Hieda, K
Suguro, K
Arikado, T
Okumura, K
Citation: T. Saito et al., Plasma-damage-free gate process using chemical mechanical polishing for 0.1 mu m MOSFETs, JPN J A P 1, 38(4B), 1999, pp. 2227-2231