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Results:
1-7
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Results: 7
Authors:
Arokiaraj, J
Okui, H
Taguchi, H
Soga, T
Jimbo, T
Umeno, M
Citation: J. Arokiaraj et al., High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells, SOL EN MAT, 66(1-4), 2001, pp. 607-614
Authors:
Arokiaraj, J
Okui, H
Taguchi, H
Soga, T
Jimbo, T
Umeno, M
Citation: J. Arokiaraj et al., Electrical characteristics of GaAs bonded to Si using SeS2 technique, JPN J A P 2, 39(9AB), 2000, pp. L911-L913
Authors:
Arokiaraj, J
Soga, T
Jimbo, T
Umeno, M
Citation: J. Arokiaraj et al., SeS2 assisted bonding of GaAs to Si - A new method for wafer bonding, APPL SURF S, 159, 2000, pp. 282-287
Authors:
Soga, T
Arokiaraj, J
Taguchi, H
Jimbo, T
Umeno, M
Citation: T. Soga et al., Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth, J CRYST GR, 221, 2000, pp. 220-224
Authors:
Soga, T
Jimbo, T
Arokiaraj, J
Umeno, M
Citation: T. Soga et al., Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition, APPL PHYS L, 77(24), 2000, pp. 3947-3949
Authors:
Arokiaraj, J
Soga, T
Jimbo, T
Umeno, M
Citation: J. Arokiaraj et al., Surface and bulk passivation effect of GaAs grown on Si substrates by SeS2treatment, JPN J A P 1, 38(12A), 1999, pp. 6587-6590
Authors:
Arokiaraj, J
Soga, T
Jimbo, T
Umeno, M
Citation: J. Arokiaraj et al., High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2, APPL PHYS L, 75(24), 1999, pp. 3826-3828
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1-7
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