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Results: 1-12 |
Results: 12
Band-gap narrowing of titanium dioxide by nitrogen doping
Authors: Morikawa, T Asahi, R Ohwaki, T Aoki, K Taga, Y
Citation: T. Morikawa et al., Band-gap narrowing of titanium dioxide by nitrogen doping, JPN J A P 2, 40(6A), 2001, pp. L561-L563
Effect of GGA on the half-metallicity of the itinerant ferromagnet CoS2 - art. no. 180401
Authors: Shishidou, T Freeman, AJ Asahi, R
Citation: T. Shishidou et al., Effect of GGA on the half-metallicity of the itinerant ferromagnet CoS2 - art. no. 180401, PHYS REV B, 6418(18), 2001, pp. 0401
Electronic structure and small polaron hole transport of copper aluminate - art. no. 155114
Authors: Ingram, BJ Mason, TO Asahi, R Park, KT Freeman, AJ
Citation: Bj. Ingram et al., Electronic structure and small polaron hole transport of copper aluminate - art. no. 155114, PHYS REV B, 6415(15), 2001, pp. 5114
Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations - art. no. 155106
Authors: Stampfl, C Mannstadt, W Asahi, R Freeman, AJ
Citation: C. Stampfl et al., Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations - art. no. 155106, PHYS REV B, 6315(15), 2001, pp. 5106
Visible-light photocatalysis in nitrogen-doped titanium oxides
Authors: Asahi, R Morikawa, T Ohwaki, T Aoki, K Taga, Y
Citation: R. Asahi et al., Visible-light photocatalysis in nitrogen-doped titanium oxides, SCIENCE, 293(5528), 2001, pp. 269-271
Indium-cadmium-oxide films having exceptional electrical conductivity and optical transparency: Clues for optimizing transparent conductors
Authors: Wang, A Babcock, JR Edleman, NL Metz, AW Lane, MA Asahi, R Dravid, VP Kannewurf, CR Freeman, AJ Marks, TJ
Citation: A. Wang et al., Indium-cadmium-oxide films having exceptional electrical conductivity and optical transparency: Clues for optimizing transparent conductors, P NAS US, 98(13), 2001, pp. 7113-7116
Computational band-structure engineering of III-V semiconductor alloys
Authors: Geller, CB Wolf, W Picozzi, S Continenza, A Asahi, R Mannstadt, W Freeman, AJ Wimmer, E
Citation: Cb. Geller et al., Computational band-structure engineering of III-V semiconductor alloys, APPL PHYS L, 79(3), 2001, pp. 368-370
Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study
Authors: Picozzi, S Continenza, A Asahi, R Mannstadt, W Freeman, AJ Wolf, W Wimmer, E Geller, CB
Citation: S. Picozzi et al., Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study, PHYS REV B, 61(7), 2000, pp. 4677-4684
Electronic and optical properties of anatase TiO2
Authors: Asahi, R Taga, Y Mannstadt, W Freeman, AJ
Citation: R. Asahi et al., Electronic and optical properties of anatase TiO2, PHYS REV B, 61(11), 2000, pp. 7459-7465
Screened-exchange LDA methods for films and superlattices with applications to the Si(100)2X1 surface and InAs/InSb superlattices
Authors: Asahi, R Mannstadt, W Freeman, AJ
Citation: R. Asahi et al., Screened-exchange LDA methods for films and superlattices with applications to the Si(100)2X1 surface and InAs/InSb superlattices, PHYS REV B, 62(4), 2000, pp. 2552-2561
Optical properties and electronic structures of semiconductors with screened-exchange LDA
Authors: Asahi, R Mannstadt, W Freeman, AJ
Citation: R. Asahi et al., Optical properties and electronic structures of semiconductors with screened-exchange LDA, PHYS REV B, 59(11), 1999, pp. 7486-7492
Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y
Authors: Charache, GW DePoy, DM Raynolds, JE Baldasaro, PF Miyano, KE Holden, T Pollak, FH Sharps, PR Timmons, ML Geller, CB Mannstadt, W Asahi, R Freeman, AJ Wolf, W
Citation: Gw. Charache et al., Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y, J APPL PHYS, 86(1), 1999, pp. 452-458
Risultati: 1-12 |