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Results:
1-13
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Results: 13
Authors:
Hall, S
Lamb, AC
Bain, M
Armstrong, BM
Gamble, H
El Mubarek, HAW
Ashburn, P
Citation: S. Hall et al., SiGeHBTs on bonded wafer substrates, MICROEL ENG, 59(1-4), 2001, pp. 449-454
Authors:
Lamb, AC
Schiz, JFW
Bonar, JM
Cristiano, F
Ashburn, P
Hall, S
Hemment, PLF
Citation: Ac. Lamb et al., Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy, MICROEL REL, 41(2), 2001, pp. 273-279
The role of carbon on the electrical properties of polycrystalline Si1-yCyand Si0.82-yGe0.18Cy films
Authors:
Anteney, IM
Parker, GJ
Ashburn, P
Kemhadjian, HA
Citation: Im. Anteney et al., The role of carbon on the electrical properties of polycrystalline Si1-yCyand Si0.82-yGe0.18Cy films, J APPL PHYS, 90(12), 2001, pp. 6182-6189
Authors:
Schiz, JFW
Lamb, AC
Cristiano, F
Bonar, JM
Ashburn, P
Hall, S
Hemment, PLF
Citation: Jfw. Schiz et al., Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy, IEEE DEVICE, 48(11), 2001, pp. 2492-2499
Authors:
Rahim, AIA
Marsh, CD
Ashburn, P
Booker, GR
Citation: Aia. Rahim et al., Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts, IEEE DEVICE, 48(11), 2001, pp. 2506-2513
Authors:
Marsh, CD
Moiseiwitsch, NE
Booker, GR
Ashburn, P
Citation: Cd. Marsh et al., Behavior and effects of fluorine in annealed n(+) polycrystalline silicon layers on silicon wafers, J APPL PHYS, 87(10), 2000, pp. 7567-7578
Authors:
Anteney, IM
Parker, GJ
Ashburn, P
Kemhadjian, HA
Citation: Im. Anteney et al., Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films, APPL PHYS L, 77(4), 2000, pp. 561-563
Authors:
Bonar, JM
Schiz, J
Ashburn, P
Citation: Jm. Bonar et al., Selective and non-selective growth of self-aligned SiGeHBT structures by LPCVD epitaxy, J MAT S-M E, 10(5-6), 1999, pp. 345-349
Authors:
Anteney, IM
Lippert, G
Ashburn, P
Osten, HJ
Heinemann, B
Parker, GJ
Knoll, D
Citation: Im. Anteney et al., Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's, IEEE ELEC D, 20(3), 1999, pp. 116-118
Authors:
Hashim, MR
Lever, RF
Ashburn, P
Citation: Mr. Hashim et al., 2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant, SOL ST ELEC, 43(1), 1999, pp. 131-140
Authors:
Schiz, J
Ashburn, P
Citation: J. Schiz et P. Ashburn, Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide, ELECTR LETT, 35(9), 1999, pp. 752-753
Authors:
Nash, GR
Schiz, JFW
Marsh, CD
Ashburn, P
Booker, GR
Citation: Gr. Nash et al., Activation energy for fluorine transport in amorphous silicon, APPL PHYS L, 75(23), 1999, pp. 3671-3673
Authors:
Moiseiwitsch, NE
Ashburn, P
Marsh, CD
Booker, GR
Citation: Ne. Moiseiwitsch et al., Assessment of a methanol-last interface treatment for use in polysilicon emitter bipolar transistor fabrication, EL SOLID ST, 1(2), 1998, pp. 91-93
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