Authors:
Fujii, E
Judai, Y
Ito, T
Kutsunai, T
Nagano, Y
Noma, A
Nasu, T
Izutsu, Y
Mikawa, T
Yasuoka, H
Azuma, M
Shimada, Y
Sasai, Y
Sato, K
Otsuki, T
Citation: E. Fujii et al., A highly reliable ferroelectric memory technology with SrBi2Ta2O9-based material and metal covering cell structure, IEEE DEVICE, 48(6), 2001, pp. 1231-1236