Authors: BABAALI N HARRISON I TUCK B

Citation: N. Babaali et al., ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES, Journal of materials science. Materials in electronics, 6(3), 1995, pp. 127-134

Authors: ORTON JW LACKLISON DE BABAALI N FOXON CT CHENG TS NOVIKOV SV JOHNSTON DFC HOOPER SE JENKINS LC CHALLIS LJ TANSLEY TL

Citation: Jw. Orton et al., THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES, Journal of electronic materials, 24(4), 1995, pp. 263-268

Authors: FOXON CT CHENG TS NOVIKOV SV LACKLISON DE JENKINS LC JOHNSTON D ORTON JW HOOPER SE BABAALI N TANSLEY TL TRETYAKOV VV

Citation: Ct. Foxon et al., THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES, Journal of crystal growth, 150(1-4), 1995, pp. 892-896

Authors: NOVIKOV SV FOXON CT CHENG TS TANSLEY TL ORTON JW LACKLISON DE JOHNSTON D BABAALI N HOOPER SE JENKINS LC EAVES L

Citation: Sv. Novikov et al., AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 340-343

Authors: HO HP HARRISON I BABAALI N TUCK B HENINI M

Citation: Hp. Ho et al., THE EFFECT OF ARSENIC PRESSURE ON THE DIFFUSION-INDUCED DISORDERING OF TIN IN ALAS GAAS SUPERLATTICES, Journal of materials science. Materials in electronics, 2(3), 1991, pp. 137-140