AAAAAA
Results: 1-25/45
Authors:
SHIM JY
CHI EJ
BAIK HK
LEE SM
Citation: Jy. Shim et al., STRUCTURAL, OPTICAL, AND FIELD-EMISSION PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILMS GROWN BY HELICAL RESONATOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(2), 1998, pp. 440-444
Authors:
YOON DS
BAIK HK
LEE SM
LEE SI
RYU H
LEE HJ
Citation: Ds. Yoon et al., INVESTIGATION OF PT TA DIFFUSION BARRIER USING HYBRID CONDUCTIVE OXIDE (RUO2) FOR HIGH DIELECTRIC APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1137-1141
Authors:
CHI EJ
SHIM JY
CHOI DJ
BAIK HK
Citation: Ej. Chi et al., EFFECTS OF HEAT-TREATMENT ON THE FIELD-EMISSION PROPERTY OF AMORPHOUS-CARBON NITRIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1219-1221
Authors:
SONG SK
CHO JS
CHOI WK
JUNG HJ
CHOI DS
LEE JY
BAIK HK
KOH SK
Citation: Sk. Song et al., STRUCTURE AND GAS-SENSING CHARACTERISTICS OF UNDOPED TIN OXIDE THIN-FILMS FABRICATED BY ION-ASSISTED DEPOSITION, Sensors and actuators. B, Chemical, 46(1), 1998, pp. 42-49
Authors:
KWAK JS
LEE JL
BAIK HK
Citation: Js. Kwak et al., IMPROVED UNIFORMITY OF CONTACT RESISTANCE IN GAAS-MESFET USING PD GE/TI/AU OHMIC CONTACTS/, IEEE electron device letters, 19(12), 1998, pp. 481-483
Authors:
CHOI DJ
KIM YH
HAN DW
BAIK HK
KIM SI
Citation: Dj. Choi et al., FORMATION OF POLYCRYSTALLINE SILICON FILMS ON GLASS SUBSTRATES AT LOW-TEMPERATURES BY A DIRECT NEGATIVE SI ION-BEAM DEPOSITION SYSTEM, Journal of crystal growth, 191(4), 1998, pp. 718-722
Authors:
KIM CY
KIM SW
HONG CH
KIM DW
BAIK HK
WHANG CN
Citation: Cy. Kim et al., EFFECTS OF TITANIUM SILICIDE ON AUSITI N-GAN OHMIC CONTACT SYSTEMS/, Journal of crystal growth, 190, 1998, pp. 720-724
Authors:
YOON DS
BAIK HK
LEE SM
Citation: Ds. Yoon et al., TANTALUM-MICROCRYSTALLINE CEO2 DIFFUSION BARRIER FOR COPPER METALLIZATION, Journal of applied physics, 83(3), 1998, pp. 1333-1336
Authors:
YOON DS
BAIK HK
LEE SM
Citation: Ds. Yoon et al., EFFECT ON THERMAL-STABILITY OF A CU TA/SI HETEROSTRUCTURE OF THE INCORPORATION OF CERIUM OXIDE INTO THE TA BARRIER/, Journal of applied physics, 83(12), 1998, pp. 8074-8076
Authors:
YOON DS
BAIK HK
LEE SM
PARK CS
LEE SI
Citation: Ds. Yoon et al., OXIDATION RESISTANCE OF TANTALUM-RUTHENIUM DIOXIDE DIFFUSION BARRIER FOR MEMORY CAPACITOR BOTTOM ELECTRODES, Applied physics letters, 73(3), 1998, pp. 324-326
Authors:
KWAK JS
BAIK HK
KIM JH
LEE SM
Citation: Js. Kwak et al., IMPROVEMENT OF TA DIFFUSION BARRIER PERFORMANCE IN CU METALLIZATION BY INSERTION OF A THIN ZR LAYER INTO TA FILM, Applied physics letters, 72(22), 1998, pp. 2832-2834
Authors:
SONG SK
CHOI WK
CHO JS
JUNG HJ
CHOI D
LEE JY
BAIK HK
KOH SK
Citation: Sk. Song et al., EFFECT OF OXYGEN-ION ENERGY AND ANNEALING IN FORMATION OF TIN OXIDE THIN-FILMS, JPN J A P 1, 36(4A), 1997, pp. 2281-2287
Authors:
RHO SJ
SHIM JY
CHI EJ
BAIK HK
LEE SM
Citation: Sj. Rho et al., THE FIELD-EMISSION CHARACTERISTICS OF A-C-H THIN-FILMS PREPARED BY HELICAL RESONATOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 36(8A), 1997, pp. 1051-1054
Authors:
SONG SK
CHOI WK
JUNG HJ
BAIK HK
KOH SK
Citation: Sk. Song et al., COMPARISON OF PROPERTIES OF TIN OXIDE-FILMS DEPOSITED BY REACTIVE-PARTIALLY IONIZED BEAM, ION-ASSISTED, AND HYBRID ION-BEAM METHODS, Nanostructured materials, 8(4), 1997, pp. 477-488
Authors:
YOON DS
BAIK HK
LEE SM
Citation: Ds. Yoon et al., MICROCRYSTALLINE OXIDE-INCORPORATED NEW DIFFUSION BARRIER FOR DYNAMICRANDOM-ACCESS MEMORY AND FERROELECTRIC RANDOM-ACCESS MEMORY CAPACITORELECTRODE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2781-2786
Authors:
PARK SW
KIM YI
KWAK JS
BAIK HK
Citation: Sw. Park et al., INVESTIGATION OF CO SIC INTERFACE REACTION, Journal of electronic materials, 26(3), 1997, pp. 172-177
Authors:
KIM DW
KWAK JS
PARK HS
KIM HN
BAIK HK
LEE SM
KIM CS
NOH SK
Citation: Dw. Kim et al., INTERFACIAL REACTION AND ELECTRICAL PROPERTY OF GE NI/ZNSE FOR BLUE LASER-DIODE/, Journal of electronic materials, 26(2), 1997, pp. 83-89
Authors:
SHIM JY
PARK SW
BAIK HK
Citation: Jy. Shim et al., SILICIDE FORMATION IN COBALT AMORPHOUS-SILICON, AMORPHOUS CO-SI AND BIAS-INDUCED CO-SI FILMS, Thin solid films, 292(1-2), 1997, pp. 31-39
Authors:
KIM JH
BAIK HK
Citation: Jh. Kim et Hk. Baik, STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS HYDROGENATED CARBON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 104(11), 1997, pp. 653-656
Authors:
JUNG HN
KIM MH
KIM KN
BAIK HK
Citation: Hn. Jung et al., THE EFFECTS OF ZR ADDITION ON MECHANICAL-PROPERTIES AND MICROSTRUCTURE OF AG-PD ALLOY, Journal of dental research, 76, 1997, pp. 531-531
Authors:
KIM GB
KWAK JS
BAIK HK
LEE SM
Citation: Gb. Kim et al., INTERFACIAL REACTION AND FORMATION MECHANISM OF EPITAXIAL COSI2 BY RAPID THERMAL ANNEALING IN CO TI/SI(100) SYSTEM/, Journal of applied physics, 82(5), 1997, pp. 2323-2328
Authors:
KIM JH
AHN DH
KIM YH
BAIK HK
Citation: Jh. Kim et al., CHARACTERIZATION OF AMORPHOUS HYDROGENATED CARBON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A HELICAL RESONATOR DISCHARGE, Journal of applied physics, 82(2), 1997, pp. 658-665
Authors:
LEE JL
KIM YT
KWAK JS
BAIK HK
UEDONO A
TANIGAWA S
Citation: Jl. Lee et al., EVIDENCE FOR THE FORMATION OF N(-GAAS LAYER IN PD())GE OHMIC CONTACT TO N-TYPE GAAS/, Journal of applied physics, 82(11), 1997, pp. 5460-5464
Authors:
KANG BS
LEE SM
KWAK JS
YOON DS
BAIK HK
Citation: Bs. Kang et al., THE EFFECTIVENESS OF TA PREPARED BY ION-ASSISTED DEPOSITION AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON, Journal of the Electrochemical Society, 144(5), 1997, pp. 1807-1812
Authors:
SONG SK
JUNG HJ
KOH SK
BAIK HK
Citation: Sk. Song et al., MODELING OF ELECTRICAL CONDUCTANCE VARIATION IN SUBSTRATE DURING INITIAL GROWTH OF ULTRA-THIN FILM, Applied physics letters, 71(6), 1997, pp. 850-851