Authors:
KIRSCHT FG
FURUKAWA Y
SEIFERT W
SCHMALZ K
BUCZKOWSKI A
KIM SB
ABE H
KOYA H
BAILEY J
Citation: Fg. Kirscht et al., ELECTRICAL CHARACTERISTICS OF OXYGEN PRECIPITATION RELATED DEFECTS INCZOCHRALSKI SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 230-236