Authors: DOWSETT MG BARLOW RD ALLEN PN

Citation: Mg. Dowsett et al., SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF ULTRATHIN IMPURITY LAYERSIN SEMICONDUCTORS AND THEIR USE IN QUANTIFICATION, INSTRUMENTAL ASSESSMENT, AND FUNDAMENTAL MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 186-198

Authors: DOWSETT MG ROWLANDS G ALLEN PN BARLOW RD

Citation: Mg. Dowsett et al., AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROM ULTRA-THIN IMPURITY LAYERS, Surface and interface analysis, 21(5), 1994, pp. 310-315

Authors: DOWSETT MG BARLOW RD

Citation: Mg. Dowsett et Rd. Barlow, CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY, Analytica chimica acta, 297(1-2), 1994, pp. 253-275

Authors: ONEILL AG BARLOW RD BISWAS RG PHILLIPS PJ TAYLOR S GUNDLACH A

Citation: Ag. Oneill et al., DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION, Electronics Letters, 29(3), 1993, pp. 263-264