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Results: 1-10 |
Results: 10
DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS
Authors: BUIJS M HABERERN KW MARSHALL T GAINES JM LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM
Citation: M. Buijs et al., DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 49-54
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/
Authors: LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM SMEKALIN K
Citation: Kk. Law et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/, Electronics Letters, 32(4), 1996, pp. 345-346
DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS
Authors: BUIJS M HABERERN K MARSHALL T LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM HORIKX J
Citation: M. Buijs et al., DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS, Electronics Letters, 32(14), 1996, pp. 1290-1291
CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: BAUDE PF HAASE MA HAUGEN GM LAW KK MILLER TJ SMEKALIN K PHILLIPS J BHATTACHARYA P
Citation: Pf. Baude et al., CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Applied physics letters, 68(25), 1996, pp. 3591-3593
TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES
Authors: UREN GD HAUGEN GM BAUDE PF HAASE MA LAW KK MILLER TJ WU BJ
Citation: Gd. Uren et al., TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES, Applied physics letters, 67(26), 1995, pp. 3862-3864
ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD
Authors: DEPUYDT JM HAASE MA GUHA S QIU J CHENG H WU BJ HOFLER GE MEISHAUGEN G HAGEDORN MS BAUDE PF
Citation: Jm. Depuydt et al., ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD, Journal of crystal growth, 138(1-4), 1994, pp. 667-676
DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILMS
Authors: BAUDE PF YE C POLLA DL
Citation: Pf. Baude et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILMS, Applied physics letters, 64(20), 1994, pp. 2670-2672
FABRICATION OF SOL-GEL DERIVED FERROELECTRIC PB0.865LA0.09ZR0.65TI0.35O3 OPTICAL WAVE-GUIDES
Authors: BAUDE PF YE C TAMAGAWA T POLLA DL
Citation: Pf. Baude et al., FABRICATION OF SOL-GEL DERIVED FERROELECTRIC PB0.865LA0.09ZR0.65TI0.35O3 OPTICAL WAVE-GUIDES, Journal of applied physics, 73(11), 1993, pp. 7960-7962
IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES
Authors: HAASE MA BAUDE PF HAGEDORN MS QUI J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ
Citation: Ma. Haase et al., IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2110
LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES
Authors: HAASE MA BAUDE PF HAGEDORN MS QIU J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ
Citation: Ma. Haase et al., LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES, Applied physics letters, 63(17), 1993, pp. 2315-2317
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