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Citation: J. Sollner et al., PRODUCTION SCALE MOCVD GROWTH OF II-VI SEMICONDUCTORS, Journal of crystal growth, 185, 1998, pp. 158-162

Authors: ADLER F GEIGER M BAUKNECHT A HAASE D ERNST P DORNEN A SCHOLZ F SCHWEIZER H

Citation: F. Adler et al., SELF-ASSEMBLED INAS GAAS QUANTUM DOTS UNDER RESONANT EXCITATION/, Journal of applied physics, 83(3), 1998, pp. 1631-1636

Authors: ADLER F GEIGER M BAUKNECHT A SCHOLZ F SCHWEIZER H

Citation: F. Adler et al., INTRINSIC CARRIER RELAXATION AND THE EXCITON LIFETIME IN INAS GAAS QUANTUM DOTS/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 431-436

Authors: GEIGER M BAUKNECHT A ADLER F SCHWEIZER H SCHOLZ F

Citation: M. Geiger et al., OBSERVATION OF THE 2D-3D GROWTH MODE TRANSITION IN THE INAS GAAS SYSTEM/, Journal of crystal growth, 170(1-4), 1997, pp. 558-562

Authors: ADLER F GEIGER M BAUKNECHT A SCHOLZ F SCHWEIZER H PILKUHN MH OHNESORGE B FORCHEL A

Citation: F. Adler et al., OPTICAL-TRANSITIONS AND CARRIER RELAXATION IN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/, Journal of applied physics, 80(7), 1996, pp. 4019-4026