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Results: 1-13 |
Results: 13
POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES
Authors: GEORGAKILAS A MICHELAKIS K HALKIAS G BECOURT N PEIRO F CORNET A
Citation: A. Georgakilas et al., POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES, Microelectronic engineering, 42, 1998, pp. 583-586
STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/
Authors: VILA A CORNET A MORANTE JR GEORGAKILAS A HALKIAS G BECOURT N
Citation: A. Vila et al., STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/, Microelectronics, 28(8-10), 1997, pp. 999-1003
SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES
Authors: BECOURT N PEIRO F CORNET A MORANTE JR GOROSTIZA P HALKIAS G MICHELAKIS K GEORGAKILAS A
Citation: N. Becourt et al., SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES, Applied physics letters, 71(20), 1997, pp. 2961-2963
OPTICAL INVESTIGATION OF QUALITY IMPROVEMENT OF 3C-SIC FILMS AFTER SACRIFICIAL OXIDATION PROCESS
Authors: ARNAUD G ALSINA F PASCUAL J DEZAUZIER C CAMASSEL J BECOURT N DICIOCCO L
Citation: G. Arnaud et al., OPTICAL INVESTIGATION OF QUALITY IMPROVEMENT OF 3C-SIC FILMS AFTER SACRIFICIAL OXIDATION PROCESS, Materials science and technology, 12(1), 1996, pp. 108-111
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES
Authors: ZEKENTES K BECOURT N ANDROULIDAKI M TSAGARAKI K STOEMENOS J BLUET JM CAMASSEL J PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
ELECTRICAL CHARACTERIZATION OF SIC FOR HIGH-TEMPERATURE THERMAL-SENSOR APPLICATIONS
Authors: DEZAUZIER C BECOURT N ARNAUD G CONTRERAS S PONTHENIER PL CAMASSEL J ROBERT JL PASCUAL J JAUSSAUD C
Citation: C. Dezauzier et al., ELECTRICAL CHARACTERIZATION OF SIC FOR HIGH-TEMPERATURE THERMAL-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 71-75
STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC
Authors: JUILLAGUET S KUBLER L DIANI M BISCHOFF JL GEWINNER G WETZEL P BECOURT N
Citation: S. Juillaguet et al., STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC, Surface science, 339(3), 1995, pp. 363-371
IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N JAUSSAUD C
Citation: C. Raynaud et al., IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/, Journal of the Electrochemical Society, 142(1), 1995, pp. 282-285
COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N BILLON T JAUSSAUD C
Citation: C. Raynaud et al., COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES, Applied physics letters, 66(18), 1995, pp. 2340-2342
LOW-FREQUENCY, HIGH-TEMPERATURE CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON METAL-OXIDE-SILICON CARBIDE CAPACITORS
Authors: OUISSE T BECOURT N JAUSSAUD C TEMPLIER F
Citation: T. Ouisse et al., LOW-FREQUENCY, HIGH-TEMPERATURE CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON METAL-OXIDE-SILICON CARBIDE CAPACITORS, Journal of applied physics, 75(1), 1994, pp. 604-607
HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
Authors: BILLON T OUISSE T LASSAGNE P JASSAUD C PONTHENIER JL BAUD L BECOURT N MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171
INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON
Authors: BECOURT N PONTHENIER JL PAPON AM JAUSSAUD C
Citation: N. Becourt et al., INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON, Physica. B, Condensed matter, 185(1-4), 1993, pp. 79-84
CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY
Authors: BECOURT N CROS B PONTHENIER JL BERJOAN R PAPON AM JAUSSAUD C
Citation: N. Becourt et al., CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY, Applied surface science, 68(4), 1993, pp. 461-466
Risultati: 1-13 |