Authors: BENEDETTO JM

Citation: Jm. Benedetto, ECONOMY-CLASS ION-DEFYING ICS IN-ORBIT, IEEE spectrum, 35(3), 1998, pp. 36-41

Authors: BENEDETTO JM

Citation: Jm. Benedetto, IMPRINT INDUCED FAILURE MODES IN FERROELECTRIC NONVOLATILE MEMORIES, Integrated ferroelectrics, 15(1-4), 1997, pp. 29-38

Authors: DHOTE AM MADHUKAR S YOUNG D VENKATESAN T RAMESH R COTELL CM BENEDETTO JM

Citation: Am. Dhote et al., LOW-TEMPERATURE GROWTH AND RELIABILITY OF FERROELECTRIC MEMORY CELL INTEGRATED ON SI WITH CONDUCTING BARRIER STACK, Journal of materials research, 12(6), 1997, pp. 1589-1594

Authors: BENEDETTO JM ROUSH ML LLOYD IK RAMESH R RYCHLIK B

Citation: Jm. Benedetto et al., THE TEMPERATURE-DEPENDENCE OF FERROELECTRIC IMPRINT, Integrated ferroelectrics, 10(1-4), 1995, pp. 279-288

Authors: MOORE RA BENEDETTO JM

Citation: Ra. Moore et Jm. Benedetto, IONIZING RADIATION-INDUCED ASYMMETRIES OF THE RETENTION CHARACTERISTICS OF FERROELECTRIC THIN-FILMS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1575-1584

Authors: BENEDETTO JM MOORE RA MCLEAN FB

Citation: Jm. Benedetto et al., EFFECTS OF OPERATING-CONDITIONS ON THE FAST-DECAY COMPONENT OF THE RETAINED POLARIZATION IN LEAD-ZIRCONATE-TITANATE THIN-FILMS, Journal of applied physics, 75(1), 1994, pp. 460-466