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Results: 1-12 |
Results: 12
LASER-INDUCED DEPOSITION OF TUNGSTEN AND COPPER
Authors: MEUNIER M IZQUIERDO R TABBAL M EVOY S DESJARDINS P BERNIER MH BERTOMEU J ELYAAGOUBI N SUYS M SACHER E YELON A
Citation: M. Meunier et al., LASER-INDUCED DEPOSITION OF TUNGSTEN AND COPPER, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 200-207
INFRARED CHARACTERIZATION OF A-SI-H A-SI1-XCX-H INTERFACES/
Authors: BERTOMEU J PUIGDOLLERS J ASENSI JM ANDREU J
Citation: J. Bertomeu et al., INFRARED CHARACTERIZATION OF A-SI-H A-SI1-XCX-H INTERFACES/, Applied surface science, 108(2), 1997, pp. 211-217
STRESS MEASUREMENTS IN POLYCRYSTALLINE SILICON FILMS GROWN BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION
Authors: PEIRO D BERTOMEU J ARRANDO F ANDREU J
Citation: D. Peiro et al., STRESS MEASUREMENTS IN POLYCRYSTALLINE SILICON FILMS GROWN BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION, Materials letters, 30(2-3), 1997, pp. 239-243
STUDY OF POSTDEPOSITION CONTAMINATION IN LOW-TEMPERATURE DEPOSITED POLYSILICON FILMS
Authors: BERTOMEU J PUIGDOLLERS J PEIRO D CIFRE J DELGADO JC ANDREU J
Citation: J. Bertomeu et al., STUDY OF POSTDEPOSITION CONTAMINATION IN LOW-TEMPERATURE DEPOSITED POLYSILICON FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 96-99
NEW FEATURES OF THE LAYER-BY-LAYER DEPOSITION OF MICROCRYSTALLINE SILICON FILMS REVEALED BY SPECTROSCOPIC ELLIPSOMETRY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
Authors: CABARROCAS PRI HAMMA S HADJADJ A BERTOMEU J ANDREU J
Citation: Pri. Cabarrocas et al., NEW FEATURES OF THE LAYER-BY-LAYER DEPOSITION OF MICROCRYSTALLINE SILICON FILMS REVEALED BY SPECTROSCOPIC ELLIPSOMETRY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 69(4), 1996, pp. 529-531
EXCIMER LASER-INDUCED DEPOSITION OF COPPER FROM CU(HFAC)(TMVS)
Authors: IZQUIERDO R BERTOMEU J SUYS M SACHER E MEUNIER M
Citation: R. Izquierdo et al., EXCIMER LASER-INDUCED DEPOSITION OF COPPER FROM CU(HFAC)(TMVS), Applied surface science, 86(1-4), 1995, pp. 509-513
P-DOPED POLYCRYSTALLINE SILICON FILMS OBTAINED AT LOW-TEMPERATURE BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION
Authors: PUIGDOLLERS J CIFRE J POLO MC ASENSI JM BERTOMEU J ANDREU J LLORET A
Citation: J. Puigdollers et al., P-DOPED POLYCRYSTALLINE SILICON FILMS OBTAINED AT LOW-TEMPERATURE BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 86(1-4), 1995, pp. 600-603
POLYCRYSTALLINE SILICON FILMS OBTAINED BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION
Authors: CIFRE J BERTOMEU J PUIGDOLLERS J POLO MC ANDREU J LLORET A
Citation: J. Cifre et al., POLYCRYSTALLINE SILICON FILMS OBTAINED BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION, Applied physics. A, Solids and surfaces, 59(6), 1994, pp. 645-651
STRUCTURAL CHARACTERIZATION OF A-SIC-H BY THERMAL-DESORPTION SPECTROSCOPY
Authors: MAASS F BERTOMEU J ASENSI JM PUIGDOLLERS J ANDREU J DELGADO JC ESTEVE J
Citation: F. Maass et al., STRUCTURAL CHARACTERIZATION OF A-SIC-H BY THERMAL-DESORPTION SPECTROSCOPY, Applied surface science, 70-1, 1993, pp. 768-771
PERSISTENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H A-SIC-H MULTILAYERS (VOL 228, PG 165, 1993)/
Authors: BERTOMEU J
Citation: J. Bertomeu, PERSISTENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H A-SIC-H MULTILAYERS (VOL 228, PG 165, 1993)/, Thin solid films, 230(1), 1993, pp. 80-80
PERSISTENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H A-SIC-H MULTILAYERS/
Authors: BERTOMEU J PUIGDOLLERS J ASENSI JM ANDREU J DELGADO JC
Citation: J. Bertomeu et al., PERSISTENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H A-SIC-H MULTILAYERS/, Thin solid films, 228(1-2), 1993, pp. 165-168
ON THE DETERMINATION OF THE INTERFACE DENSITY-OF-STATES IN A-SI-H A-SI1-XCX-H MULTILAYERS/
Authors: BERTOMEU J PUIGDOLLERS J ASENSI JM ANDREU J
Citation: J. Bertomeu et al., ON THE DETERMINATION OF THE INTERFACE DENSITY-OF-STATES IN A-SI-H A-SI1-XCX-H MULTILAYERS/, Journal of non-crystalline solids, 166, 1993, pp. 861-864
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