AAAAAA
Results:
1-10
|
Results: 10
Authors:
SEN O
BESIKCI C
TANATAR B
Citation: O. Sen et al., EFFECTS OF SCREENING ON THE 2-DIMENSIONAL ELECTRON-TRANSPORT PROPERTIES IN MODULATION-DOPED HETEROSTRUCTURES, Solid-state electronics, 42(6), 1998, pp. 987-991
Authors:
TEVKE A
BESIKCI C
VANHOOF C
BORGHS G
Citation: A. Tevke et al., INSB INFRARED P-I-N PHOTODETECTORS GROWN ON GAAS COATED SI SUBSTRATESBY MOLECULAR-BEAM EPITAXY, Solid-state electronics, 42(6), 1998, pp. 1039-1044
Authors:
BESIKCI C
TANATAR B
SEN O
Citation: C. Besikci et al., HYDRODYNAMIC APPROACH FOR MODELING TRANSPORT IN QUANTUM-WELL DEVICE STRUCTURES, Journal of physics. D, Applied physics, 31(17), 1998, pp. 2211-2218
Authors:
BESIKCI C
CIVAN Y
OZDER S
SEN O
JELEN C
SLIVKEN S
RAZEGHI M
Citation: C. Besikci et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GA0.51IN0.49P INXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES/, Semiconductor science and technology, 12(11), 1997, pp. 1472-1478
Authors:
BESIKCI C
CHOI YH
LABEYRIE G
BIGAN E
RAZEGHI M
COHEN JB
CARSELLO J
DRAVID VP
Citation: C. Besikci et al., DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(10), 1994, pp. 5820-5828
Authors:
BESIKCI C
RAZEGHI M
Citation: C. Besikci et M. Razeghi, ON THE DESCRIPTION OF THE COLLISION TERMS IN THREE-VALLEY HYDRODYNAMIC MODELS FOR GAAS DEVICE MODELING, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1471-1475
Authors:
BESIKCI C
RAZEGHI M
Citation: C. Besikci et M. Razeghi, ELECTRON-TRANSPORT PROPERTIES OF GA0.51IN0.49P FOR DEVICE APPLICATIONS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 1066-1069
Authors:
MICHEL E
SINGH G
SLIVKEN S
BESIKCI C
BOVE P
FERGUSON I
RAZEGHI M
Citation: E. Michel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB, Applied physics letters, 65(26), 1994, pp. 3338-3340
Authors:
BESIKCI C
CHOI YH
SUDHARSANAN R
RAZEGHI M
Citation: C. Besikci et al., ANOMALOUS HALL-EFFECT IN INSB LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION ON GAAS SUBSTRATES, Journal of applied physics, 73(10), 1993, pp. 5009-5013
GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:
CHOI YH
BESIKCI C
SUDHARSANAN R
RAZEGHI M
Citation: Yh. Choi et al., GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(3), 1993, pp. 361-363
Risultati:
1-10
|