Authors:
KAPON E
REINHARDT F
BIASIOL G
GUSTAFSSON A
Citation: E. Kapon et al., SURFACE AND INTERFACE PROPERTIES OF QUANTUM NANOSTRUCTURES GROWN ON NONPLANAR SUBSTRATES, Applied surface science, 123, 1998, pp. 674-681
Authors:
BIASIOL G
KAPON E
DUCOMMUN Y
GUSTAFSSON A
Citation: G. Biasiol et al., SELF-ORDERING OF QUANTUM-WIRE SUPERLATTICES ON V-GROOVED SUBSTRATES, Physical review. B, Condensed matter, 57(16), 1998, pp. 9416-9419
Citation: G. Biasiol et E. Kapon, MECHANISMS OF SELF-ORDERING OF QUANTUM NANOSTRUCTURES GROWN ON NONPLANAR SURFACES, Physical review letters, 81(14), 1998, pp. 2962-2965
Authors:
MARTINET E
REINHARDT F
GUSTAFSSON A
BIASIOL G
KAPON E
Citation: E. Martinet et al., SELF-ORDERING AND CONFINEMENT IN STRAINED INGAAS ALGAAS V-GROOVE QUANTUM WIRES GROWN BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 72(6), 1998, pp. 701-703
Authors:
BIASIOL G
REINHARDT F
GUSTAFSSON A
KAPON E
Citation: G. Biasiol et al., SELF-LIMITING OMCVD GROWTH OF GAAS ON V-GROOVED SUBSTRATES WITH APPLICATION TO INGAAS GAAS QUANTUM WIRES/, Journal of electronic materials, 26(10), 1997, pp. 1194-1198
Authors:
MARTIN F
VOLPARI C
STEINKUHLER C
DIMASI N
BRUNETTI M
BIASIOL G
ALTAMURA S
CORTESE R
DEFRANCESCO R
SOLLAZZO M
Citation: F. Martin et al., AFFINITY SELECTION OF A CAMELIZED V-H DOMAIN ANTIBODY INHIBITOR OF HEPATITIS-C VIRUS NS3 PROTEASE, Protein engineering, 10(5), 1997, pp. 607-614
Authors:
DIMASI N
MARTIN F
VOLPARI C
BRUNETTI M
BIASIOL G
ALTAMURA S
CORTESE R
DEFRANCESCO R
STEINKUHLER C
SOLLAZZO M
Citation: N. Dimasi et al., CHARACTERIZATION OF ENGINEERED HEPATITIS-C VIRUS NS3 PROTEASE INHIBITORS AFFINITY SELECTED FROM HUMAN PANCREATIC SECRETORY TRYPSIN-INHIBITOR AND MINIBODY REPERTOIRES, Journal of virology, 71(10), 1997, pp. 7461-7469
Authors:
BIASIOL G
MARTINET E
REINHARDT F
GUSTAFSSON A
KAPON E
Citation: G. Biasiol et al., LOW-PRESSURE OMCVD GROWTH OF ALGAAS VERTICAL QUANTUM-WELLS ON NONPLANAR SUBSTRATES (VOL 170, PG 600, 1997), Journal of crystal growth, 181(3), 1997, pp. 318-319
Authors:
BIASIOL G
MARTINET E
REINHARDT F
GUSTAFSSON A
KAPON E
Citation: G. Biasiol et al., LOW-PRESSURE OMCVD GROWTH OF ALGAAS VERTICAL QUANTUM-WELLS ON NONPLANAR SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 600-604
Authors:
BIANCHI E
URBANI A
BIASIOL G
BRUNETTI M
PESSI A
DEFRANCESCO R
STEINKUHLER C
Citation: E. Bianchi et al., COMPLEX-FORMATION BETWEEN THE HEPATITIS-C VIRUS SERINE-PROTEASE AND ASYNTHETIC NS4A COFACTOR PEPTIDE, Biochemistry, 36(25), 1997, pp. 7890-7897
Citation: B. Dwir et al., CROSS-SECTIONAL ATOMIC-FORCE IMAGING OF SEMICONDUCTOR HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 83-88
Authors:
STEINKUHLER C
URBANI A
TOMEI L
BIASIOL G
SARDANA M
BIANCHI E
PESSI A
DEFRANCESCO R
Citation: C. Steinkuhler et al., ACTIVITY OF PURIFIED HEPATITIS-C VIRUS PROTEASE NS3 ON PEPTIDE-SUBSTRATES, Journal of virology, 70(10), 1996, pp. 6694-6700
Authors:
BIASIOL G
REINHARDT F
GUSTAFSSON A
MARTINET E
KAPON E
Citation: G. Biasiol et al., STRUCTURE AND FORMATION MECHANISMS OF ALGAAS V-GROOVE VERTICAL QUANTUM-WELLS GROWN BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(18), 1996, pp. 2710-2712
Authors:
GUSTAFSSON A
REINHARDT F
BIASIOL G
KAPON E
Citation: A. Gustafsson et al., LOW-PRESSURE ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION OF QUANTUM WIRES ON V-GROOVED SUBSTRATES, Applied physics letters, 67(25), 1995, pp. 3673-3675
Authors:
CANTILE M
SORBA L
FARACI P
YILDIRIM S
BIASIOL G
BRATINA G
FRANCIOSI A
MILLER TJ
NATHAN MI
TAPFER L
Citation: M. Cantile et al., MODIFICATION OF AL GAAS(001) SCHOTTKY BARRIERS BY MEANS OF HETEROVALENT INTERFACE LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2653-2659
Authors:
BRATINA G
VANZETTI L
SORBA L
BIASIOL G
FRANCIOSI A
PERESSI M
BARONI S
Citation: G. Bratina et al., LACK OF BAND-OFFSET TRANSITIVITY FOR SEMICONDUCTOR HETEROJUNCTIONS WITH POLAR ORIENTATION - ZNSE-GE(001), GE-GAAS(001), AND ZNSE-GAAS(001), Physical review. B, Condensed matter, 50(16), 1994, pp. 11723-11729
Citation: A. Franciosi et al., MODIFICATION OF HETEROJUNCTION BAND OFFSETS AT III-V IV/III-V INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1628-1637