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Results: 1-12 |
Results: 12
REFLECTANCE DIFFERENCE SPECTROSCOPY - EXPERIMENT AND THEORY FOR THE MODEL SYSTEM SI(001)AS AND APPLICATION TO SI(001)
Authors: KIPP L BIEGELSEN DK NORTHRUP JE SWARTZ LE BRINGANS RD
Citation: L. Kipp et al., REFLECTANCE DIFFERENCE SPECTROSCOPY - EXPERIMENT AND THEORY FOR THE MODEL SYSTEM SI(001)AS AND APPLICATION TO SI(001), Physical review letters, 76(15), 1996, pp. 2810-2813
PHOSPHINE ADSORPTION AND DECOMPOSITION ON SI(100) 2X1 STUDIED BY STM
Authors: KIPP L BRINGANS RD BIEGELSEN DK NORTHRUP JE GARCIA A SWARTZ LE
Citation: L. Kipp et al., PHOSPHINE ADSORPTION AND DECOMPOSITION ON SI(100) 2X1 STUDIED BY STM, Physical review. B, Condensed matter, 52(8), 1995, pp. 5843-5850
THREADING DISLOCATIONS IN GAAS GROWN WITH FREE SIDEWALLS ON SI MESAS
Authors: KNALL J ROMANO LT KRUSOR BS BIEGELSEN DK BRINGANS RD
Citation: J. Knall et al., THREADING DISLOCATIONS IN GAAS GROWN WITH FREE SIDEWALLS ON SI MESAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3069-3074
ZNSE HETEROEPITAXIAL GROWTH ON SI(100) AND GAAS(100)
Authors: BIEGELSEN DK BRINGANS RD NORTHRUP JE SWARTZ LE
Citation: Dk. Biegelsen et al., ZNSE HETEROEPITAXIAL GROWTH ON SI(100) AND GAAS(100), Scanning microscopy, 8(4), 1994, pp. 883-888
ARSINE ABSORPTION ON SI(100) 2X1 - A PHOTOEMISSION AND SCANNING-TUNNELING-MICROSCOPY STUDY
Authors: KIPP L BRINGANS RD BIEGELSEN DK SWARTZ LE HICKS RF
Citation: L. Kipp et al., ARSINE ABSORPTION ON SI(100) 2X1 - A PHOTOEMISSION AND SCANNING-TUNNELING-MICROSCOPY STUDY, Physical review. B, Condensed matter, 50(8), 1994, pp. 5448-5455
ATOMIC REARRANGEMENT AT THE INTERFACE OF ANNEALED ZNSE FILMS GROWN ONVICINAL SI(001) SUBSTRATES
Authors: ROMANO LT BRINGANS RD KNALL J BIEGELSEN DK GARCIA A NORTHRUP JE OKEEFE MA
Citation: Lt. Romano et al., ATOMIC REARRANGEMENT AT THE INTERFACE OF ANNEALED ZNSE FILMS GROWN ONVICINAL SI(001) SUBSTRATES, Physical review. B, Condensed matter, 50(7), 1994, pp. 4416-4423
SELENIUM-TERMINATED AND TELLURIUM-TERMINATED GAAS(100) SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
Authors: BIEGELSEN DK BRINGANS RD NORTHRUP JE SWARTZ LE
Citation: Dk. Biegelsen et al., SELENIUM-TERMINATED AND TELLURIUM-TERMINATED GAAS(100) SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 49(8), 1994, pp. 5424-5428
THE USE OF GRADED INGAAS LAYERS AND PATTERNED SUBSTRATES TO REMOVE THREADING DISLOCATIONS FROM GAAS ON SI
Authors: KNALL J ROMANO LT BIEGELSEN DK BRINGANS RD CHUI HC HARRIS JS TREAT DW BOUR DP
Citation: J. Knall et al., THE USE OF GRADED INGAAS LAYERS AND PATTERNED SUBSTRATES TO REMOVE THREADING DISLOCATIONS FROM GAAS ON SI, Journal of applied physics, 76(5), 1994, pp. 2697-2702
MISFIT DISLOCATIONS IN ZNSE GROWN ON VICINAL SI(001) SUBSTRATES
Authors: ROMANO LT KNALL J BRINGANS RD BIEGELSEN DK
Citation: Lt. Romano et al., MISFIT DISLOCATIONS IN ZNSE GROWN ON VICINAL SI(001) SUBSTRATES, Applied physics letters, 65(7), 1994, pp. 869-871
SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES
Authors: LIU HI BIEGELSEN DK PONCE FA JOHNSON NM PEASE RFW
Citation: Hi. Liu et al., SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES, Applied physics letters, 64(11), 1994, pp. 1383-1385
SELF-LIMITING OXIDATION OF SI NANOWIRES
Authors: LIU HI BIEGELSEN DK JOHNSON NM PONCE FA PEASE RFW
Citation: Hi. Liu et al., SELF-LIMITING OXIDATION OF SI NANOWIRES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2532-2537
ARSENIC TERMINATION OF THE SI(110) SURFACE
Authors: BIEGELSEN DK BRINGANS RD NORTHRUP JE SCHABEL MC SWARTZ LE
Citation: Dk. Biegelsen et al., ARSENIC TERMINATION OF THE SI(110) SURFACE, Physical review. B, Condensed matter, 47(15), 1993, pp. 9589-9596
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