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Results: 1-11 |
Results: 11
ANALYSIS OF SPECTRAL RESPONSE IN P-TYPE GAAS GAINP QWIPS/
Authors: HOFF J JELEN C SLIVKEN S BIGAN E RAZEGHI M BROWN GJ
Citation: J. Hoff et al., ANALYSIS OF SPECTRAL RESPONSE IN P-TYPE GAAS GAINP QWIPS/, Superlattices and microstructures, 18(4), 1995, pp. 249-257
P-DOPED GAAS GA0.51IN0.49P QUANTUM-WELL INTERSUB-BAND PHOTODETECTORS/
Authors: HOFF J HE X ERDTMANN M BIGAN E RAZEGHI M BROWN GJ
Citation: J. Hoff et al., P-DOPED GAAS GA0.51IN0.49P QUANTUM-WELL INTERSUB-BAND PHOTODETECTORS/, Journal of applied physics, 78(3), 1995, pp. 2126-2128
8-13 MU-M INASSB HETEROJUNCTION PHOTODIODE OPERATING AT NEAR ROOM-TEMPERATURE
Authors: KIM JD KIM S WU D WOJKOWSKI J XU J PIOTROWSKI J BIGAN E RAZEGHI M
Citation: Jd. Kim et al., 8-13 MU-M INASSB HETEROJUNCTION PHOTODIODE OPERATING AT NEAR ROOM-TEMPERATURE, Applied physics letters, 67(18), 1995, pp. 2645-2647
BACKGROUND LIMITED PERFORMANCE IN P-DOPED GAAS GA0.71IN0.29AS0.39P0.61 QUANTUM-WELL INFRARED PHOTODETECTORS/
Authors: HOFF J KIM S ERDTMANN M WILLIAMS R PIOTROWSKI J BIGAN E RAZEGHI M BROWN GJ
Citation: J. Hoff et al., BACKGROUND LIMITED PERFORMANCE IN P-DOPED GAAS GA0.71IN0.29AS0.39P0.61 QUANTUM-WELL INFRARED PHOTODETECTORS/, Applied physics letters, 67(1), 1995, pp. 22-24
EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: DIAZ J YI HJ ERDTMANN M HE X KOLEV E GARBUZOV D BIGAN E RAZEGHI M
Citation: J. Diaz et al., EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 76(2), 1994, pp. 700-704
DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BESIKCI C CHOI YH LABEYRIE G BIGAN E RAZEGHI M COHEN JB CARSELLO J DRAVID VP
Citation: C. Besikci et al., DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(10), 1994, pp. 5820-5828
THERMAL-STABILITY OF GAN THIN-FILMS GROWN ON (0001) AL2O3, (01(1)OVER-BAR-2) AL2O3 AND (0001)SI 6H-SIC SUBSTRATES
Authors: SUN CJ KUNG P SAXLER A OHSATO H BIGAN E RAZEGHI M GASKILL DK
Citation: Cj. Sun et al., THERMAL-STABILITY OF GAN THIN-FILMS GROWN ON (0001) AL2O3, (01(1)OVER-BAR-2) AL2O3 AND (0001)SI 6H-SIC SUBSTRATES, Journal of applied physics, 76(1), 1994, pp. 236-241
CHARACTERIZATION OF INTLSB INSB GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON A GAAS SUBSTRATE/
Authors: CHOI YH STAVETEIG PT BIGAN E RAZEGHI M
Citation: Yh. Choi et al., CHARACTERIZATION OF INTLSB INSB GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON A GAAS SUBSTRATE/, Journal of applied physics, 75(6), 1994, pp. 3196-3198
INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: BROWN GJ HEGDE SM HOFF J JELEN C SLIVKEN S MICHEL E DUCHEMIN O BIGAN E RAZEGHI M
Citation: Gj. Brown et al., INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(9), 1994, pp. 1130-1132
PHOTOCONDUCTANCE MEASUREMENTS ON INTISB INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: STAVETEIG PT CHOI YH LABEYRIE G BIGAN E RAZEGHI M
Citation: Pt. Staveteig et al., PHOTOCONDUCTANCE MEASUREMENTS ON INTISB INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 64(4), 1994, pp. 460-462
HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES
Authors: SAXLER A KUNG P SUN CJ BIGAN E RAZEGHI M
Citation: A. Saxler et al., HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES, Applied physics letters, 64(3), 1994, pp. 339-341
Risultati: 1-11 |