AAAAAA
Results:
1-15
|
Results: 15
Authors:
ZEUNER M
NEUMANN H
SCHOLZE F
FLAMM D
TARTZ M
BIGL F
Citation: M. Zeuner et al., CHARACTERIZATION OF A MODULAR BROAD-BEAM ION-SOURCE, Plasma sources science & technology, 7(3), 1998, pp. 252-267
Authors:
FROST F
SCHINDLER A
BIGL F
Citation: F. Frost et al., ION-BEAM SMOOTHING OF INDIUM-CONTAINING III-V COMPOUND SEMICONDUCTORS, Applied physics A: Materials science & processing, 66(6), 1998, pp. 663-668
Authors:
FROST F
SCHINDLER A
BIGL F
Citation: F. Frost et al., REACTIVE ION-BEAM ETCHING OF INSB AND INAS WITH ULTRASMOOTH SURFACES, Semiconductor science and technology, 13(5), 1998, pp. 523-527
Authors:
ZIMMER K
DIENELT J
HERFURTH F
BRAUN A
OTTE K
LIPPOLD G
GOTTSCHALCH V
BIGL F
Citation: K. Zimmer et al., EXCIMER-LASER ETCHING OF GAAS, ALXGA1-XAS AND CUINSE2 IN CHLORINE ATMOSPHERE, Applied surface science, 129, 1998, pp. 800-804
Authors:
BRAUN A
ZIMMER K
HOSSELBARTH B
MEINHARDT J
BIGL F
MEHNERT R
Citation: A. Braun et al., EXCIMER-LASER MICROMACHINING AND REPLICATION OF 3D OPTICAL-SURFACES, Applied surface science, 129, 1998, pp. 911-914
Authors:
OTTE K
FROST F
SCHINDLER A
LIPPOLD G
GOTTSCHALCH V
FLAGMEYER RH
BIGL F
Citation: K. Otte et al., INFLUENCE OF ETCHING PARAMETERS ON THE DEFECT PROFILE AND THE DEPTH OF DAMAGE OF ALGAAS INDUCED BY ION-BEAM ETCHING, Microelectronic engineering, 42, 1998, pp. 427-430
Authors:
OTTE K
FROST F
SCHINDLER A
BIGL F
LIPPOLD G
GOTTSCHALCH V
FLAGMEYER RH
Citation: K. Otte et al., HIGH-PRECISION DEPTH PROFILING OF ARGON AND NITROGEN ION ETCHING-INDUCED DAMAGE IN AN ALGAAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURE/, Thin solid films, 318(1-2), 1998, pp. 132-135
Authors:
OTTE K
SCHINDLER A
BIGL F
SCHLEMM H
Citation: K. Otte et al., A MODIFIED BROAD-BEAM ION-SOURCE FOR LOW-ENERGY HYDROGEN IMPLANTATION, Review of scientific instruments, 69(3), 1998, pp. 1499-1504
Authors:
FRANKE E
NEUMANN H
ZEUNER M
FRANK W
BIGL F
Citation: E. Franke et al., PARTICLE ENERGY AND ANGLE DISTRIBUTIONS IN ION-BEAM SPUTTERING, Surface & coatings technology, 97(1-3), 1997, pp. 90-96
Authors:
TARTZ M
HARTMANN E
SCHOLZE F
NEUMANN H
BIGL F
Citation: M. Tartz et al., A NEW APPROACH TO ION-BEAM MODELING, Surface & coatings technology, 97(1-3), 1997, pp. 504-509
Authors:
SCHOLZE F
NEUMANN H
ZEUNER M
BIGL F
MAI J
Citation: F. Scholze et al., SCALABLE LARGE-VOLUME ECR PLASMA GENERATION FOR LOW-PRESSURE APPLICATIONS, Surface & coatings technology, 97(1-3), 1997, pp. 755-758
Authors:
FROST F
OTTE K
SCHINDLER A
BIGL F
LIPPOLD G
GOTTSCHALCH V
Citation: F. Frost et al., MEASUREMENT OF THE DEPTH DISTRIBUTION OF ION-BEAM ETCHING-INDUCED DAMAGE IN ALGAAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURE/, Applied physics letters, 71(10), 1997, pp. 1362-1364
Authors:
PIETZONKA I
HIRSCH D
GOTTSCHALCH V
SCHWABE R
FRANZHELD R
BENTE K
BIGL F
Citation: I. Pietzonka et al., ATOMIC-FORCE MICROSCOPY ON (001) SURFACES OF GAAS MOVPE LAYERS, CHEMICAL VAPOR DEPOSITION, 2(2), 1996, pp. 44-48
Authors:
ZIMMER K
HIRSCH D
BIGL F
Citation: K. Zimmer et al., EXCIMER-LASER MACHINING FOR THE FABRICATION OF ANALOGOUS MICROSTRUCTURES, Applied surface science, 96-8, 1996, pp. 425-429
Authors:
ZEUNER M
MEICHSNER J
NEUMANN H
SCHOLZE F
BIGL F
Citation: M. Zeuner et al., DESIGN OF ION ENERGY-DISTRIBUTIONS BY A BROAD-BEAM ION-SOURCE, Journal of applied physics, 80(2), 1996, pp. 611-622
Risultati:
1-15
|