ACNP - Italian Periodicals Catalogue

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Results: 10

INFLUENCE OF ETCH STOPS ON THE MICROSTRUCTURE OF POROUS SILICON LAYERS

Authors: BILLAT S THONISSEN M ARENSFISCHER R BERGER MG KRUGER M LUTH H

Citation: S. Billat et al., INFLUENCE OF ETCH STOPS ON THE MICROSTRUCTURE OF POROUS SILICON LAYERS, Thin solid films, 297(1-2), 1997, pp. 22-25

ANALYSIS OF THE DEPTH HOMOGENEITY OF P-PS BY REFLECTANCE MEASUREMENTS

Authors: THONISSEN M BERGER MG BILLAT S ARENSFISCHER R KRUGER M LUTH H THEISS W HILLBRICH S GROSSE P LERONDEL G FROTSCHER U

Citation: M. Thonissen et al., ANALYSIS OF THE DEPTH HOMOGENEITY OF P-PS BY REFLECTANCE MEASUREMENTS, Thin solid films, 297(1-2), 1997, pp. 92-96

DIELECTRIC FILTERS MADE OF PS - ADVANCED PERFORMANCE BY OXIDATION ANDNEW LAYER STRUCTURES

Authors: BERGER MG ARENSFISCHER R THONISSEN M KRUGER M BILLAT S LUTH H HILBRICH S THEISS W GROSSE P

Citation: Mg. Berger et al., DIELECTRIC FILTERS MADE OF PS - ADVANCED PERFORMANCE BY OXIDATION ANDNEW LAYER STRUCTURES, Thin solid films, 297(1-2), 1997, pp. 237-240

COLOR-SENSITIVE PHOTODETECTOR BASED ON POROUS SILICON SUPERLATTICES

Authors: KRUGER M MARSO M BERGER MG THONISSEN M BILLAT S LOO R REETZ W LUTH H HILBRICH S ARENSFISCHER R GROSSE P

Citation: M. Kruger et al., COLOR-SENSITIVE PHOTODETECTOR BASED ON POROUS SILICON SUPERLATTICES, Thin solid films, 297(1-2), 1997, pp. 241-244

DEPTH INHOMOGENEITY OF POROUS SILICON LAYERS

Authors: THONISSEN M BILLAT S KRUGER M LUTH H BERGER MG FROTSCHER U ROSSOW U

Citation: M. Thonissen et al., DEPTH INHOMOGENEITY OF POROUS SILICON LAYERS, Journal of applied physics, 80(5), 1996, pp. 2990-2993

ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN GALVANOSTATIC REGIME

Authors: BILLAT S

Citation: S. Billat, ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN GALVANOSTATIC REGIME, Journal of the Electrochemical Society, 143(3), 1996, pp. 1055-1061

ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME

Authors: BILLAT S GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN F VIAL JC

Citation: S. Billat et al., ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME, Thin solid films, 263(2), 1995, pp. 238-242

SYNCHROTRON-RADIATION STUDY OF STRUCTURAL-PROPERTIES OF POROUS SILICON

Authors: BELET D DOLINO G BILLAT S LIGEON M LEFEBVRE S BESSIERE M

Citation: D. Belet et al., SYNCHROTRON-RADIATION STUDY OF STRUCTURAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 62(2), 1994, pp. 49-54

BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT

Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R

Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602

ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON

Authors: LIGEON M MULLER F HERINO R GASPARD F VIAL JC ROMESTAIN R BILLAT S BSIESY A

Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271

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