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Results: 1-11 |
Results: 11
DISSOCIATED V-SHAPED DISLOCATION MODEL FOR THE RELAXATION OF STRAINEDSINGLE HETEROSTRUCTURES
Authors: NIJENHUIS JT VANWELL HFJM BONGERS MMG GILING LJ
Citation: Jt. Nijenhuis et al., DISSOCIATED V-SHAPED DISLOCATION MODEL FOR THE RELAXATION OF STRAINEDSINGLE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 52(1), 1998, pp. 17-24
TEMPERATURE-DEPENDENT FACET DEVELOPMENT IN THE DEPOSITION OF GAINP ONNONPLANAR SURFACES
Authors: BASTOS PL ANDERS MJ BONGERS MMG SCHERMER JJ GILING LJ
Citation: Pl. Bastos et al., TEMPERATURE-DEPENDENT FACET DEVELOPMENT IN THE DEPOSITION OF GAINP ONNONPLANAR SURFACES, Surface science, 370(2-3), 1997, pp. 179-189
NONPLANAR CRYSTAL-GROWTH OF GA0.5IN0.5P BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BONGERS MMG BASTOS PL ANDERS MJ GILING LJ
Citation: Mmg. Bongers et al., NONPLANAR CRYSTAL-GROWTH OF GA0.5IN0.5P BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 171(3-4), 1997, pp. 333-340
TEMPERATURE-DEPENDENCE ON THE EMERGING CRYSTAL HABIT OF GAINP DEPOSITED ON NONPLANAR (001)GAAS SUBSTRATES
Authors: BASTOS PL ANDERS MJ BONGERS MMG HAGEMAN PR GILING LJ
Citation: Pl. Bastos et al., TEMPERATURE-DEPENDENCE ON THE EMERGING CRYSTAL HABIT OF GAINP DEPOSITED ON NONPLANAR (001)GAAS SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 710-714
CHARACTERIZATION OF A [4FE-4S]-FERREDOXIN MODEL-BASED ON A CONCAVE TETRADENTATE THIOL LIGAND SYSTEM
Authors: MARTENS CF BONGERS MMG KENIS PJA CZAJKA R FEITERS MC VANDERLINDEN JGM NOLTE RJM
Citation: Cf. Martens et al., CHARACTERIZATION OF A [4FE-4S]-FERREDOXIN MODEL-BASED ON A CONCAVE TETRADENTATE THIOL LIGAND SYSTEM, Chemische Berichte, 130(1), 1997, pp. 23-33
ON THE FORMATION OF ANTIPHASE DOMAINS IN THE SYSTEM OF GAAS ON GE
Authors: LI Y SALVIATI G BONGERS MMG LAZZARINI L NASI L GILING LJ
Citation: Y. Li et al., ON THE FORMATION OF ANTIPHASE DOMAINS IN THE SYSTEM OF GAAS ON GE, Journal of crystal growth, 163(3), 1996, pp. 195-202
STRUCTURAL-ANALYSIS OF INXGA1-XAS GROWN ON GE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BONGERS MMG LI Y TENIJENHUIS J GILING LJ
Citation: Mmg. Bongers et al., STRUCTURAL-ANALYSIS OF INXGA1-XAS GROWN ON GE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 162(1-2), 1996, pp. 7-14
TOP EDGE FACET DEVELOPMENT IN ASYMMETRIC GROOVES
Authors: BASTOS PL BONGERS MMG ANDERS MJ SCHERMER JJ GILING LJ
Citation: Pl. Bastos et al., TOP EDGE FACET DEVELOPMENT IN ASYMMETRIC GROOVES, Surface science, 344(3), 1995, pp. 1275-1279
POSITION-DEPENDENT GROWTH-RATE AND COMPOSITION OF LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN INGAP AND ALGAAS ON GAAS INVERTED MESA GROOVES
Authors: ANDERS MJ BONGERS MMG BASTOS PL GILING LJ
Citation: Mj. Anders et al., POSITION-DEPENDENT GROWTH-RATE AND COMPOSITION OF LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN INGAP AND ALGAAS ON GAAS INVERTED MESA GROOVES, Journal of crystal growth, 154(3-4), 1995, pp. 240-250
TEMPERATURE-DEPENDENT FACET DEVELOPMENT OF LP-MOCVD INGAP GROWN ON PATTERNED GAAS SUBSTRATES
Authors: BONGERS MMG BASTOS PL GILING LJ
Citation: Mmg. Bongers et al., TEMPERATURE-DEPENDENT FACET DEVELOPMENT OF LP-MOCVD INGAP GROWN ON PATTERNED GAAS SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 981-982
HIGH-SPATIAL-RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS GROWN ON A NONPLANAR SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: OLSTHOORN SM BONGERS MMG GILING LJ
Citation: Sm. Olsthoorn et al., HIGH-SPATIAL-RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS GROWN ON A NONPLANAR SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 65(15), 1994, pp. 1952-1954
Risultati: 1-11 |