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Citation: K. Bornig et al., MODELING AND SIMULATION OF PROFILE ABERRATIONS RESULTING FROM DRY-ETCHING OF POLYSILICON FOR CRITICAL GATE LEVELS, Microelectronic engineering, 42, 1998, pp. 395-398

Authors: BORNIG K JANES J JUNEMANN B

Citation: K. Bornig et al., ENERGY-DISTRIBUTIONS AND ANGULAR-DISTRIBUTIONS OF ARGON NEUTRALS AND THEIR INFLUENCE ON ETCHING PROFILES, Microelectronic engineering, 30(1-4), 1996, pp. 357-360

Authors: BORNIG K HENKE W

Citation: K. Bornig et W. Henke, THE IMPACT OF POLARIZED ILLUMINATION ON IMAGING CHARACTERISTICS IN OPTICAL MICROLITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 217-220

Authors: BORNIG K JANES J

Citation: K. Bornig et J. Janes, ANGULAR CHARACTERISTICS OF ARGON ION FLUXES AT THE RF-POWERED ELECTRODE OF A PARALLEL-PLATE REACTOR, Microelectronic engineering, 26(3-4), 1995, pp. 217-227

Authors: BORNIG K PELKA J

Citation: K. Bornig et J. Pelka, SIMULATION OF TIME DEPENDING PARTICLE-TRANSPORT DURING DRY ETCH PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 325-328