Authors: BORODOVSKII PA BULDYGIN AF VARAVIN VS

Citation: Pa. Borodovskii et al., DETERMINING SURFACE RECOMBINATION RATES IN EPITAXIAL LAYERS OF N-CDXHG1-XTE FROM MEASUREMENTS OF THE PLANAR MAGNETORESISTANCE AND RELAXATION-TIMES FOR NONEQUILIBRIUM CHARGE-CARRIERS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 963-965

Authors: BORODOVSKII PA BULDYGIN AF

Citation: Pa. Borodovskii et Af. Buldygin, A MICROWAVE WAVE-GUIDE DEVICE FOR MEASURING THE UNIFORMITY OF CDXHG1-XTE EPITAXIAL-FILMS, Instruments and experimental techniques, 38(6), 1995, pp. 799-803

Authors: BORODOVSKII PA BULDYGIN AF REMESNIK VG

Citation: Pa. Borodovskii et al., INVESTIGATION OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL P-TYPE CDXHG1-XTE CDTE STRUCTURES BY THE MICROWAVE METHOD, Semiconductors, 28(12), 1994, pp. 1159-1161

Authors: BORODOVSKII PA UTKIN KK

Citation: Pa. Borodovskii et Kk. Utkin, MICROWAVE CAVITY TECHNIQUE FOR STUDYING N-N+ SEMICONDUCTOR STRUCTURES, Instruments and experimental techniques, 37(3), 1994, pp. 348-350