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Results: 1-25 | 26-50 | 51-59
Results: 1-25/59
LATTICE CURVATURE OF INXGA1-XAS GAAS[001] GRADED BUFFER LAYERS/
Authors: ROMANATO F NATALI M NAPOLITANI E DRIGO AV BOSACCHI A FERRARI C FRANCHI S SALVIATI G
Citation: F. Romanato et al., LATTICE CURVATURE OF INXGA1-XAS GAAS[001] GRADED BUFFER LAYERS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3578-3581
DIRECT-AND INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XSB (X-LESS-THAN-OR-EQUAL-TO-0.41)
Authors: BIGNAZZI A GRILLI E GUZZI M BOCCHI C BOSACCHI A FRANCHI S MAGNANINI R
Citation: A. Bignazzi et al., DIRECT-AND INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XSB (X-LESS-THAN-OR-EQUAL-TO-0.41), Physical review. B, Condensed matter, 57(4), 1998, pp. 2295-2301
SELF-CONSISTENT ELECTRON-MOBILITY CALCULATION IN A MODULATION-DOPED 2-DIMENSIONAL ELECTRON-GAS
Authors: PIAZZA V CASARINI P DEFRANCESCHI S LAZZARINO M BELTRAM F JACOBONI C BOSACCHI A FRANCHI S
Citation: V. Piazza et al., SELF-CONSISTENT ELECTRON-MOBILITY CALCULATION IN A MODULATION-DOPED 2-DIMENSIONAL ELECTRON-GAS, Physical review. B, Condensed matter, 57(16), 1998, pp. 10017-10020
DEEP-LEVEL INVESTIGATION ON N-IN0.35GA0.65AS GAAS STRUCTURES/
Authors: GOMBIA E MOSCA R PAL D MOTTA A NASI L BOSACCHI A FRANCHI S
Citation: E. Gombia et al., DEEP-LEVEL INVESTIGATION ON N-IN0.35GA0.65AS GAAS STRUCTURES/, Solid-state electronics, 42(2), 1998, pp. 211-215
DEEP LEVELS IN VIRTUALLY UNSTRAINED INGAAS LAYERS DEPOSITED ON GAAS
Authors: PAL D GOMBIA E MOSCA R BOSACCHI A FRANCHI S
Citation: D. Pal et al., DEEP LEVELS IN VIRTUALLY UNSTRAINED INGAAS LAYERS DEPOSITED ON GAAS, Journal of applied physics, 84(5), 1998, pp. 2965-2967
SELF-AGGREGATED INAS QUANTUM DOTS IN GAAS
Authors: PATANE A ALESSI MG INTONTI F POLIMENI A CAPIZZI M MARTELLI F NASI L LAZZARINI L SALVIATI G BOSACCHI A FRANCHI S
Citation: A. Patane et al., SELF-AGGREGATED INAS QUANTUM DOTS IN GAAS, Journal of applied physics, 83(10), 1998, pp. 5529-5535
INFLUENCE OF PREPARATION PROCEDURE ON THE CHARACTERISTICS OF SCHOTTKYBARRIERS FABRICATED IN-SITU ON MBE GASB
Authors: MOSCA R GOMBIA E MOTTA A BOSACCHI A FRANCHI S BENEVENTI C GHEZZI C MAGNANINI R
Citation: R. Mosca et al., INFLUENCE OF PREPARATION PROCEDURE ON THE CHARACTERISTICS OF SCHOTTKYBARRIERS FABRICATED IN-SITU ON MBE GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 24-27
CONTROL OF THE N-TYPE DOPING IN ALXGA1-XSB - DX-CENTER BEHAVIOR OF THE TE IMPURITY
Authors: BARALDI A COLONNA F COVUCCI G GHEZZI C MAGNANINI R PARISINI A TARRICONE L BOSACCHI A FRANCHI S
Citation: A. Baraldi et al., CONTROL OF THE N-TYPE DOPING IN ALXGA1-XSB - DX-CENTER BEHAVIOR OF THE TE IMPURITY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 70-73
SIZE QUANTIZATION PATTERNS IN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/
Authors: COLOCCI M BOGANI F CARRARESI L MATTOLINI R BOSACCHI A FRANCHI S FRIGERI P TADDEI S ROSACLOT M
Citation: M. Colocci et al., SIZE QUANTIZATION PATTERNS IN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/, Superlattices and microstructures, 22(1), 1997, pp. 81-84
CONCENTRATION-DEPENDENCE OF OPTICAL-ABSORPTION IN TELLURIUM-DOPED GASB
Authors: GHEZZI C MAGNANINI R PARISINI A ROTELLI B TARRICONE L BOSACCHI A FRANCHI S
Citation: C. Ghezzi et al., CONCENTRATION-DEPENDENCE OF OPTICAL-ABSORPTION IN TELLURIUM-DOPED GASB, Semiconductor science and technology, 12(7), 1997, pp. 858-866
PHONON RESPONSE OF ALXGA1-XSB GASB EPITAXIAL LAYERS BY FOURIER-TRANSFORM INFRARED-REFLECTANCE AND RAMAN SPECTROSCOPIES/
Authors: FERRINI R GALLI M GUIZZETTI G PATRINI M BOSACCHI A FRANCHI S MAGNANINI R
Citation: R. Ferrini et al., PHONON RESPONSE OF ALXGA1-XSB GASB EPITAXIAL LAYERS BY FOURIER-TRANSFORM INFRARED-REFLECTANCE AND RAMAN SPECTROSCOPIES/, Physical review. B, Condensed matter, 56(12), 1997, pp. 7549-7553
THERMOREFLECTANCE STUDY OF THE DIRECT ENERGY-GAP OF GASB
Authors: BELLANI V DILERNIA S GEDDO M GUIZZETTI G BOSACCHI A FRANCHI S MAGNANINI R
Citation: V. Bellani et al., THERMOREFLECTANCE STUDY OF THE DIRECT ENERGY-GAP OF GASB, Solid state communications, 104(2), 1997, pp. 81-84
INFRARED REFLECTANCE STUDY OF N-TYPE GASB EPITAXIAL LAYERS
Authors: FERRINI R GUIZZETTI G PATRINI M BOSACCHI A FRANCHI S MAGNANINI R
Citation: R. Ferrini et al., INFRARED REFLECTANCE STUDY OF N-TYPE GASB EPITAXIAL LAYERS, Solid state communications, 104(12), 1997, pp. 747-751
OPTICAL FUNCTIONS OF BULK AND EPITAXIAL GASB FROM 0.0025 TO 6 EV
Authors: PATRINI M GUIZZETTI G GALLI M FERRINI R BOSACCHI A FRANCHI S MAGNANINI R
Citation: M. Patrini et al., OPTICAL FUNCTIONS OF BULK AND EPITAXIAL GASB FROM 0.0025 TO 6 EV, Solid state communications, 101(2), 1997, pp. 93-98
EVOLUTION OF THE OPTICAL-PROPERTIES OF INAS GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES/
Authors: PATANE A ALESSI MG INTONTI F POLIMENI A CAPIZZI M MARTELLI F GEDDO M BOSACCHI A FRANCHI S
Citation: A. Patane et al., EVOLUTION OF THE OPTICAL-PROPERTIES OF INAS GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 493-497
INAS GAAS SELF-ASSEMBLED QUANTUM DOTS GROWN BY ALMBE AND MBE/
Authors: BOSACCHI A FRIGERI P FRANCHI S ALLEGRI P AVANZINI V
Citation: A. Bosacchi et al., INAS GAAS SELF-ASSEMBLED QUANTUM DOTS GROWN BY ALMBE AND MBE/, Journal of crystal growth, 175, 1997, pp. 771-776
CONTINUOUSLY GRADED BUFFERS FOR INGAAS GAAS STRUCTURES GROWN ON GAAS/
Authors: BOSACCHI A DERICCARDIS AC FRIGERI P FRANCHI S FERRARI C GENNARI S LAZZARINI L NASI L SALVIATI G DRIGO AV ROMANATO F
Citation: A. Bosacchi et al., CONTINUOUSLY GRADED BUFFERS FOR INGAAS GAAS STRUCTURES GROWN ON GAAS/, Journal of crystal growth, 175, 1997, pp. 1009-1015
PHOTOLUMINESCENCE STUDY OF HEAVY DOPING EFFECTS IN TE-DOPED GASB
Authors: BIGNAZZI A BOSACCHI A MAGNANINI R
Citation: A. Bignazzi et al., PHOTOLUMINESCENCE STUDY OF HEAVY DOPING EFFECTS IN TE-DOPED GASB, Journal of applied physics, 81(11), 1997, pp. 7540-7547
LATTICE STRAIN RELAXATION STUDY IN THE GA1-XALXSB GASB SYSTEM BY HIGH-RESOLUTION X-RAY-DIFFRACTION/
Authors: BOCCHI C BOSACCHI A FRANCHI S GENNARI S MAGNANINI R DRIGO AV
Citation: C. Bocchi et al., LATTICE STRAIN RELAXATION STUDY IN THE GA1-XALXSB GASB SYSTEM BY HIGH-RESOLUTION X-RAY-DIFFRACTION/, Applied physics letters, 71(11), 1997, pp. 1549-1551
GROWTH-PATTERNS OF SELF-ASSEMBLED INAS QUANTUM DOTS NEAR 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION
Authors: COLOCCI M BOGANI F CARRARESI L MATTOLINI R BOSACCHI A FRANCHI S FRIGERI P ROSACLOT M TADDEI S
Citation: M. Colocci et al., GROWTH-PATTERNS OF SELF-ASSEMBLED INAS QUANTUM DOTS NEAR 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION, Applied physics letters, 70(23), 1997, pp. 3140-3142
ELECTRON-MOBILITY AND PHYSICAL MAGNETORESISTANCE IN N-TYPE GASB LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BARALDI A COLONNA F GHEZZI C MAGNANINI R PARISINI A TARRICONE L BOSACCHI A FRANCHI S
Citation: A. Baraldi et al., ELECTRON-MOBILITY AND PHYSICAL MAGNETORESISTANCE IN N-TYPE GASB LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 11(11), 1996, pp. 1656-1667
STOKES SHIFT IN QUANTUM-WELLS - TRAPPING VERSUS THERMALIZATION
Authors: POLIMENI A PATANE A ALESSI MG CAPIZZI M MARTELLI F BOSACCHI A FRANCHI S
Citation: A. Polimeni et al., STOKES SHIFT IN QUANTUM-WELLS - TRAPPING VERSUS THERMALIZATION, Physical review. B, Condensed matter, 54(23), 1996, pp. 16389-16392
COEXISTENCE OF THE DX CENTER WITH NONMETASTABLE STATES OF THE DONOR IMPURITY IN SI-DOPED ALXGA1-XAS - EFFECTS ON THE LOW-TEMPERATURE ELECTRON-MOBILITY
Authors: BARALDI A FRIGERI P GHEZZI C PARISINI A BOSACCHI A FRANCHI S GOMBIA E MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER WITH NONMETASTABLE STATES OF THE DONOR IMPURITY IN SI-DOPED ALXGA1-XAS - EFFECTS ON THE LOW-TEMPERATURE ELECTRON-MOBILITY, Physical review. B, Condensed matter, 53(16), 1996, pp. 10715-10727
EXCITON LOCALIZATION BY POTENTIAL FLUCTUATIONS AT THE INTERFACE OF INGAAS GAAS QUANTUM-WELLS/
Authors: MARTELLI F POLIMENI A PATANE A CAPIZZI M BORRI P GURIOLI M COLOCCI M BOSACCHI A FRANCHI S
Citation: F. Martelli et al., EXCITON LOCALIZATION BY POTENTIAL FLUCTUATIONS AT THE INTERFACE OF INGAAS GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 53(11), 1996, pp. 7421-7425
RELAXATION AND RECOMBINATION IN ULTRASMALL INAS QUANTUM DOTS
Authors: BOGANI F CARRARESI L MATTOLINI R COLOCCI M BOSACCHI A FRANCHI S
Citation: F. Bogani et al., RELAXATION AND RECOMBINATION IN ULTRASMALL INAS QUANTUM DOTS, Solid-state electronics, 40(1-8), 1996, pp. 363-366
Risultati: 1-25 | 26-50 | 51-59